BB911/AT/R datasheet, PDF - EEWORLD Datasheet

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BB911/AT/R: DescriptionDIODE VHF BAND, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode; CategoryDiscrete semiconductor diode; File Size38KB，1 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BB911/AT/R Overview

DIODE VHF BAND, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode

BB911/AT/R Parametric

Parameter Name	Attribute value
Maker	NXP
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	MATCHED TO 2.5%
Shell connection	ISOLATED
Configuration	SINGLE
Minimum diode capacitance ratio	23.3
Nominal diode capacitance	60 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY
JEDEC-95 code	DO-34
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	30 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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Maker	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP	NXP
Reach Compliance Code	compliant	unknown	unknown	unknown	unknown	unknown	unknown	compliant	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum diode capacitance ratio	23.3	8.9	14	14.5	8.2	19.5	19.5	7.6	7.8	7.8
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY	ULTRA HIGH FREQUENCY	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY TO L BAND	ULTRA HIGH FREQUENCY TO L BAND
JESD-30 code	O-LALF-W2	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	O-LALF-W2	R-PDSO-G2	R-PDSO-G2
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2	2	2
Package body material	GLASS	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	GLASS	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	ROUND	RECTANGULAR	RECTANGULAR
Package form	LONG FORM	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	LONG FORM	SMALL OUTLINE	SMALL OUTLINE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	YES	YES	YES	YES	YES	NO	YES	YES
Terminal form	WIRE	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	WIRE	GULL WING	GULL WING
Terminal location	AXIAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	AXIAL	DUAL	DUAL
Other features	MATCHED TO 2.5%	0.5% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE	-	-	-	CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES	CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES	MATCHED TO 3%	CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES	CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES
Nominal diode capacitance	60 pF	17.5 pF	42 pF	39.3 pF	18.75 pF	-	-	11 pF	-	-
package instruction	-	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	-	R-PDSO-G2	R-PDSO-G2
Minimum breakdown voltage	-	30 V	-	30 V	-	30 V	30 V	-	30 V	30 V
Maximum operating temperature	-	125 °C	-	125 °C	-	125 °C	125 °C	-	125 °C	125 °C
Minimum operating temperature	-	-55 °C	-	-55 °C	-	-55 °C	-55 °C	-	-55 °C	-55 °C
Maximum reverse current	-	0.01 µA	-	0.01 µA	-	0.01 µA	0.01 µA	-	0.02 µA	0.02 µA
Reverse test voltage	-	30 V	-	30 V	-	30 V	30 V	-	30 V	30 V

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