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BB134-T

Description
DIODE UHF BAND, 17.5 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
CategoryDiscrete semiconductor    diode   
File Size38KB,1 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BB134-T Overview

DIODE UHF BAND, 17.5 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode

BB134-T Parametric

Parameter NameAttribute value
MakerNXP
package instructionR-PDSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Other features0.5% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE
Minimum breakdown voltage30 V
ConfigurationSINGLE
Minimum diode capacitance ratio8.9
Nominal diode capacitance17.5 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandULTRA HIGH FREQUENCY
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum reverse current0.01 µA
Reverse test voltage30 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1

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Maker NXP NXP NXP NXP NXP NXP NXP NXP NXP NXP
Reach Compliance Code unknown unknown compliant unknown unknown unknown unknown compliant unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum diode capacitance ratio 8.9 14 23.3 14.5 8.2 19.5 19.5 7.6 7.8 7.8
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
frequency band ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY VERY HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY VERY HIGH FREQUENCY ULTRA HIGH FREQUENCY ULTRA HIGH FREQUENCY TO L BAND ULTRA HIGH FREQUENCY TO L BAND
JESD-30 code R-PDSO-G2 R-PDSO-G2 O-LALF-W2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 O-LALF-W2 R-PDSO-G2 R-PDSO-G2
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2 2
Package body material PLASTIC/EPOXY PLASTIC/EPOXY GLASS PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY GLASS PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR ROUND RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR ROUND RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE LONG FORM SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE LONG FORM SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES NO YES YES YES YES NO YES YES
Terminal form GULL WING GULL WING WIRE GULL WING GULL WING GULL WING GULL WING WIRE GULL WING GULL WING
Terminal location DUAL DUAL AXIAL DUAL DUAL DUAL DUAL AXIAL DUAL DUAL
package instruction R-PDSO-G2 R-PDSO-G2 - R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 R-PDSO-G2 - R-PDSO-G2 R-PDSO-G2
Other features 0.5% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE - MATCHED TO 2.5% - - CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES MATCHED TO 3% CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES
Minimum breakdown voltage 30 V - - 30 V - 30 V 30 V - 30 V 30 V
Nominal diode capacitance 17.5 pF 42 pF 60 pF 39.3 pF 18.75 pF - - 11 pF - -
Maximum operating temperature 125 °C - - 125 °C - 125 °C 125 °C - 125 °C 125 °C
Minimum operating temperature -55 °C - - -55 °C - -55 °C -55 °C - -55 °C -55 °C
Maximum reverse current 0.01 µA - - 0.01 µA - 0.01 µA 0.01 µA - 0.02 µA 0.02 µA
Reverse test voltage 30 V - - 30 V - 30 V 30 V - 30 V 30 V

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