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MA4E2532M-1113W

Description
MIXER DIODE,CHIP / DIE
CategoryDiscrete semiconductor    diode   
File Size103KB,4 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric Compare View All

MA4E2532M-1113W Overview

MIXER DIODE,CHIP / DIE

MA4E2532M-1113W Parametric

Parameter NameAttribute value
MakerTE Connectivity
Contacts4
Manufacturer packaging codeCASE 1113
Reach Compliance Codeunknown
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum operating frequency18 GHz
Maximum operating temperature150 °C
MA4E2532L-1113, MA4E2532M-1113
SURMOUNT
TM
Low & Medium Barrier
Silicon Schottky Diodes: Ring Quad Series
Features
Extremely Low Parasitic Capacitance and In-
ductance
Surface Mountable in Microwave Circuits, No
Wirebonds Required
Rugged HMIC Construction with Polyimide
Scratch Protection
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300°C, 16
hours)
Lower Susceptibility to ESD Damage
M/A-COM Products
Rev. V3
Case Style 1113
A
B
Description
The MA4E2532-1113 Series SURMOUNT
TM
Low
and Medium Barrier, Silicon Schottky Ring Quad
Diodes are fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of Silicon pedestals which
form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, low
loss, microstrip transmission medium. The combi-
nation of silicon and glass allows HMIC devices to
have excellent loss and power dissipation charac-
teristics in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior me-
chanical performance of a chip. The Surmount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic dis-
charge than conventional beam lead Schottky di-
odes.
The multi-layer metallization employed in the fabri-
cation of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all de-
vices to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0505” outline allows for Surface Mount place-
ment and multi-functional polarity orientations.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
volume is not guaranteed.
C
D
E
D
Case Style 1113
DIM
A
B
C
D Sq.
E
INCHES
MIN.
0.0445
0.0445
0.0040
0.0128
0.0128
MILLIMETERS
MIN.
1.130
1.130
0.102
0.325
0.325
MAX.
0.0465
0.0465
0.0080
0.0148
0.0148
MAX.
1.180
1.180
0.203
0.375
0.375
product(s) or information contained herein without notice.

MA4E2532M-1113W Related Products

MA4E2532M-1113W MA4E2532M-1113T MA4E2532M-1113
Description MIXER DIODE,CHIP / DIE MIXER DIODE,CHIP / DIE MIXER DIODE,CHIP / DIE
Maker TE Connectivity TE Connectivity TE Connectivity
Contacts 4 4 4
Manufacturer packaging code CASE 1113 CASE 1113 CASE 1113
Reach Compliance Code unknown unknown unknown
Diode component materials SILICON SILICON SILICON
Diode type MIXER DIODE MIXER DIODE MIXER DIODE
Maximum operating frequency 18 GHz 18 GHz 18 GHz
Maximum operating temperature 150 °C 150 °C 150 °C
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