CAT28C512HI-15 datasheet, PDF - EEWORLD Datasheet

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CAT28C512HI-15: Description64KX8 EEPROM 5V, 150ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32; Categorystorage storage; File Size76KB，12 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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CAT28C512HI-15 Overview

64KX8 EEPROM 5V, 150ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32

CAT28C512HI-15 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TSOP
package instruction	TSOP1, TSSOP32,.8,20
Contacts	32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	150 ns
command user interface	NO
Data polling	YES
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G32
JESD-609 code	e3
length	18.4 mm
memory density	524288 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
page size	128 words
Parallel/Serial	PARALLEL
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.0002 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
switch bit	YES
width	8 mm
Maximum write cycle time (tWC)	5 ms
Base Number Matches	1

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CAT28C512/513

512K-Bit CMOS PARALLEL EEPROM

FEATURES

Fast Read Access Times: 120/150 ns

Low Power CMOS Dissipation:

Automatic Page Write Operation:

–Active: 50 mA Max.

–Standby: 200

A Max.

Simple Write Operation:

–1 to 128 Bytes in 5ms

–Page Load Timer

End of Write Detection:

–On-Chip Address and Data Latches

–Self-Timed Write Cycle with Auto-Clear

Fast Write Cycle Time:

–Toggle Bit

–DATA Polling

DATA

Hardware and Software Write Protection

100,000 Program/Erase Cycles

100 Year Data Retention

Commercial, Industrial and Automotive

–5ms Max

CMOS and TTL Compatible I/O

Temperature Ranges

DESCRIPTION

The CAT28C512/513 is a fast,low power, 5V-only CMOS

parallel EEPROM organized as 64K x 8-bits. It requires

a simple interface for in-system programming. On-chip

address and data latches, self-timed write cycle with

auto-clear and V

power up/down write protection

eliminate additional timing and protection hardware.

DATA

Polling and Toggle status bits signal the start and

end of the self-timed write cycle. Additionally, the

CAT28C512/513 features hardware and software write

protection.

The CAT28C512/513 is manufactured using Catalyst’s

advanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 100 years. The device is available in JEDEC

approved 32-pin DIP, PLCC and TSOP packages.

BLOCK DIAGRAM

ADDR. BUFFER

& LATCHES

INADVERTENT

WRITE

PROTECTION

ROW

DECODER

65,536 x 8

EEPROM

ARRAY

128 BYTE PAGE

A7–A15

VCC

HIGH VOLTAGE

GENERATOR

CONTROL

I/O BUFFERS

TIMER

DATA POLLING

AND

TOGGLE BIT

COLUMN

DECODER

I/O0–I/O7

A0–A6

ADDR. BUFFER

& LATCHES

Characteristics subject to change without notice

Doc. No. MD-1007, Rev. I

CAT28C512HI-15 Related Products

	CAT28C512HI-15	CAT28C512GI-12	CAT28C512HI-12	CAT28C512LI-12	CAT28C512LI-15	CAT28C512TI-12	CAT28C512GI-15	CAT28C512TI-15
Description	64KX8 EEPROM 5V, 150ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32	64KX8 EEPROM 5V, 120ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32	64KX8 EEPROM 5V, 120ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32	64KX8 EEPROM 5V, 120ns, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32	IC 64K X 8 EEPROM 5V, 150 ns, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32, Programmable ROM	64KX8 EEPROM 5V, 120ns, PDSO32, 8 X 20 MM, TSOP-32	64KX8 EEPROM 5V, 150ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32	64KX8 EEPROM 5V, 150ns, PDSO32, 8 X 20 MM, TSOP-32
Parts packaging code	TSOP	QFJ	TSOP	DIP	DIP	TSOP	QFJ	TSOP
package instruction	TSOP1, TSSOP32,.8,20	QCCJ, LDCC32,.5X.6	TSOP1, TSSOP32,.8,20	DIP,	DIP,	TSOP1, TSSOP32,.8,20	QCCJ, LDCC32,.5X.6	TSOP1, TSSOP32,.8,20
Contacts	32	32	32	32	32	32	32	32
Reach Compliance Code	compliant	unknown	unknown	unknown	unknown	unknown	unknown	not_compliant
Maximum access time	150 ns	120 ns	120 ns	120 ns	150 ns	120 ns	150 ns	150 ns
JESD-30 code	R-PDSO-G32	R-PQCC-J32	R-PDSO-G32	R-PDIP-T32	R-PDIP-T32	R-PDSO-G32	R-PQCC-J32	R-PDSO-G32
length	18.4 mm	13.97 mm	18.4 mm	42.03 mm	42.03 mm	18.4 mm	13.97 mm	18.4 mm
memory density	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit	524288 bit
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
memory width	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32	32	32
word count	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words
character code	64000	64000	64000	64000	64000	64000	64000	64000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8	64KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	QCCJ	TSOP1	DIP	DIP	TSOP1	QCCJ	TSOP1
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE	IN-LINE	IN-LINE	SMALL OUTLINE, THIN PROFILE	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Programming voltage	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	3.55 mm	1.2 mm	5.08 mm	5.08 mm	1.2 mm	3.55 mm	1.2 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	NO	NO	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	J BEND	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	J BEND	GULL WING
Terminal pitch	0.5 mm	1.27 mm	0.5 mm	2.54 mm	2.54 mm	0.5 mm	1.27 mm	0.5 mm
Terminal location	DUAL	QUAD	DUAL	DUAL	DUAL	DUAL	QUAD	DUAL
width	8 mm	11.43 mm	8 mm	15.24 mm	15.24 mm	8 mm	11.43 mm	8 mm
Maximum write cycle time (tWC)	5 ms	5 ms	5 ms	5 ms	5 ms	5 ms	5 ms	5 ms
Is it Rohs certified?	conform to	conform to	conform to	-	-	incompatible	conform to	incompatible
command user interface	NO	NO	NO	-	-	NO	NO	NO
Data polling	YES	YES	YES	-	-	YES	YES	YES
Durability	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	-	-	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-609 code	e3	e3	e3	e3	e3	-	e3	-
Encapsulate equivalent code	TSSOP32,.8,20	LDCC32,.5X.6	TSSOP32,.8,20	-	-	TSSOP32,.8,20	LDCC32,.5X.6	TSSOP32,.8,20
page size	128 words	128 words	128 words	-	-	128 words	128 words	128 words
power supply	5 V	5 V	5 V	-	-	5 V	5 V	5 V
Maximum standby current	0.0002 A	0.0002 A	0.0002 A	-	-	0.0002 A	0.0002 A	0.0002 A
Maximum slew rate	0.05 mA	0.05 mA	0.05 mA	-	-	0.05 mA	0.05 mA	0.05 mA
Terminal surface	TIN	TIN	TIN	TIN	TIN	-	TIN	-
switch bit	YES	YES	YES	-	-	YES	YES	YES
Base Number Matches	1	1	1	1	1	1	-	-
Maker	-	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	-	ON Semiconductor	ON Semiconductor

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