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CAT28C512TI-12

Description
64KX8 EEPROM 5V, 120ns, PDSO32, 8 X 20 MM, TSOP-32
Categorystorage    storage   
File Size76KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

CAT28C512TI-12 Overview

64KX8 EEPROM 5V, 120ns, PDSO32, 8 X 20 MM, TSOP-32

CAT28C512TI-12 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTSOP
package instructionTSOP1, TSSOP32,.8,20
Contacts32
Reach Compliance Codeunknown
Maximum access time120 ns
command user interfaceNO
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G32
length18.4 mm
memory density524288 bit
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals32
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP32,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
page size128 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.0002 A
Maximum slew rate0.05 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
width8 mm
Maximum write cycle time (tWC)5 ms
Base Number Matches1
CAT28C512/513
512K-Bit CMOS PARALLEL EEPROM
FEATURES
s
Fast Read Access Times: 120/150 ns
s
Low Power CMOS Dissipation:
s
Automatic Page Write Operation:
–Active: 50 mA Max.
–Standby: 200
µ
A Max.
s
Simple Write Operation:
–1 to 128 Bytes in 5ms
–Page Load Timer
s
End of Write Detection:
–On-Chip Address and Data Latches
–Self-Timed Write Cycle with Auto-Clear
s
Fast Write Cycle Time:
–Toggle Bit
–DATA Polling
DATA
s
Hardware and Software Write Protection
s
100,000 Program/Erase Cycles
s
100 Year Data Retention
s
Commercial, Industrial and Automotive
–5ms Max
s
CMOS and TTL Compatible I/O
Temperature Ranges
DESCRIPTION
The CAT28C512/513 is a fast,low power, 5V-only CMOS
parallel EEPROM organized as 64K x 8-bits. It requires
a simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware.
DATA
Polling and Toggle status bits signal the start and
end of the self-timed write cycle. Additionally, the
CAT28C512/513 features hardware and software write
protection.
The CAT28C512/513 is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC
approved 32-pin DIP, PLCC and TSOP packages.
BLOCK DIAGRAM
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
ROW
DECODER
65,536 x 8
EEPROM
ARRAY
128 BYTE PAGE
REGISTER
A7–A15
VCC
HIGH VOLTAGE
GENERATOR
CE
OE
WE
CONTROL
I/O BUFFERS
TIMER
DATA POLLING
AND
TOGGLE BIT
COLUMN
DECODER
I/O0–I/O7
A0–A6
ADDR. BUFFER
& LATCHES
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
1
Doc. No. MD-1007, Rev. I

CAT28C512TI-12 Related Products

CAT28C512TI-12 CAT28C512GI-12 CAT28C512HI-12 CAT28C512LI-12 CAT28C512LI-15 CAT28C512HI-15 CAT28C512GI-15 CAT28C512TI-15
Description 64KX8 EEPROM 5V, 120ns, PDSO32, 8 X 20 MM, TSOP-32 64KX8 EEPROM 5V, 120ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32 64KX8 EEPROM 5V, 120ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32 64KX8 EEPROM 5V, 120ns, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32 IC 64K X 8 EEPROM 5V, 150 ns, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32, Programmable ROM 64KX8 EEPROM 5V, 150ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32 64KX8 EEPROM 5V, 150ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32 64KX8 EEPROM 5V, 150ns, PDSO32, 8 X 20 MM, TSOP-32
Parts packaging code TSOP QFJ TSOP DIP DIP TSOP QFJ TSOP
package instruction TSOP1, TSSOP32,.8,20 QCCJ, LDCC32,.5X.6 TSOP1, TSSOP32,.8,20 DIP, DIP, TSOP1, TSSOP32,.8,20 QCCJ, LDCC32,.5X.6 TSOP1, TSSOP32,.8,20
Contacts 32 32 32 32 32 32 32 32
Reach Compliance Code unknown unknown unknown unknown unknown compliant unknown not_compliant
Maximum access time 120 ns 120 ns 120 ns 120 ns 150 ns 150 ns 150 ns 150 ns
JESD-30 code R-PDSO-G32 R-PQCC-J32 R-PDSO-G32 R-PDIP-T32 R-PDIP-T32 R-PDSO-G32 R-PQCC-J32 R-PDSO-G32
length 18.4 mm 13.97 mm 18.4 mm 42.03 mm 42.03 mm 18.4 mm 13.97 mm 18.4 mm
memory density 524288 bit 524288 bit 524288 bit 524288 bit 524288 bit 524288 bit 524288 bit 524288 bit
Memory IC Type EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM
memory width 8 8 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1 1 1
Number of terminals 32 32 32 32 32 32 32 32
word count 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words 65536 words
character code 64000 64000 64000 64000 64000 64000 64000 64000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
organize 64KX8 64KX8 64KX8 64KX8 64KX8 64KX8 64KX8 64KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP1 QCCJ TSOP1 DIP DIP TSOP1 QCCJ TSOP1
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE CHIP CARRIER SMALL OUTLINE, THIN PROFILE IN-LINE IN-LINE SMALL OUTLINE, THIN PROFILE CHIP CARRIER SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Programming voltage 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 3.55 mm 1.2 mm 5.08 mm 5.08 mm 1.2 mm 3.55 mm 1.2 mm
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount YES YES YES NO NO YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form GULL WING J BEND GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING J BEND GULL WING
Terminal pitch 0.5 mm 1.27 mm 0.5 mm 2.54 mm 2.54 mm 0.5 mm 1.27 mm 0.5 mm
Terminal location DUAL QUAD DUAL DUAL DUAL DUAL QUAD DUAL
width 8 mm 11.43 mm 8 mm 15.24 mm 15.24 mm 8 mm 11.43 mm 8 mm
Maximum write cycle time (tWC) 5 ms 5 ms 5 ms 5 ms 5 ms 5 ms 5 ms 5 ms
Is it Rohs certified? incompatible conform to conform to - - conform to conform to incompatible
command user interface NO NO NO - - NO NO NO
Data polling YES YES YES - - YES YES YES
Durability 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles - - 100000 Write/Erase Cycles 100000 Write/Erase Cycles 100000 Write/Erase Cycles
Encapsulate equivalent code TSSOP32,.8,20 LDCC32,.5X.6 TSSOP32,.8,20 - - TSSOP32,.8,20 LDCC32,.5X.6 TSSOP32,.8,20
page size 128 words 128 words 128 words - - 128 words 128 words 128 words
power supply 5 V 5 V 5 V - - 5 V 5 V 5 V
Maximum standby current 0.0002 A 0.0002 A 0.0002 A - - 0.0002 A 0.0002 A 0.0002 A
Maximum slew rate 0.05 mA 0.05 mA 0.05 mA - - 0.05 mA 0.05 mA 0.05 mA
switch bit YES YES YES - - YES YES YES
Base Number Matches 1 1 1 1 1 1 - -
Maker - ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor - ON Semiconductor ON Semiconductor
JESD-609 code - e3 e3 e3 e3 e3 e3 -
Terminal surface - TIN TIN TIN TIN TIN TIN -

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