APT5027BNR-GULLWING datasheet, PDF

APT5027BNR-GULLWING: DescriptionPower Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size164KB，4 Pages; ManufacturerADPOW; Websitehttp://www.advancedpower.com/

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APT5027BNR-GULLWING Overview

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN

Parameter Name	Attribute value
Maker	ADPOW
package instruction	FLANGE MOUNT, R-PSFM-G3
Reach Compliance Code	unknown
Is Samacsys	N
Avalanche Energy Efficiency Rating (Eas)	960 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.27 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	450 pF
JESD-30 code	R-PSFM-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	250 W
Maximum pulsed drain current (IDM)	80 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON
Maximum off time (toff)	228 ns
Maximum opening time (tons)	155 ns
Base Number Matches	1

	APT5027BNR-GULLWING	APT5027BNR-BUTT
Description	Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN	Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Maker	ADPOW	ADPOW
package instruction	FLANGE MOUNT, R-PSFM-G3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown
Is Samacsys	N	N
Avalanche Energy Efficiency Rating (Eas)	960 mJ	960 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V
Maximum drain current (ID)	20 A	20 A
Maximum drain-source on-resistance	0.27 Ω	0.27 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	450 pF	450 pF
JESD-30 code	R-PSFM-G3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	250 W	250 W
Maximum pulsed drain current (IDM)	80 A	80 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	228 ns	228 ns
Maximum opening time (tons)	155 ns	155 ns
Base Number Matches	1	1

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