FDS3601ND84Z datasheet, PDF - EEWORLD Datasheet

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FDS3601ND84Z: DescriptionPower Field-Effect Transistor, 1.3A I(D), 100V, 0.53ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8; CategoryThe transistor; File Size79KB，4 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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FDS3601ND84Z Overview

Power Field-Effect Transistor, 1.3A I(D), 100V, 0.53ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

FDS3601ND84Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	1.3 A
Maximum drain-source on-resistance	0.53 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	6 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

FDS3601ND84Z Related Products

	FDS3601ND84Z	FDS3601NS62Z	FDS3601NL99Z	FDS3601NL86Z
Description	Power Field-Effect Transistor, 1.3A I(D), 100V, 0.53ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8	Power Field-Effect Transistor, 1.3A I(D), 100V, 0.53ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8	Power Field-Effect Transistor, 1.3A I(D), 100V, 0.53ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8	Power Field-Effect Transistor, 1.3A I(D), 100V, 0.53ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Maker	Fairchild	Fairchild	Fairchild	Fairchild
Parts packaging code	SOT	SOT	SOT	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Contacts	8	8	8	8
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	N	N	N
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V
Maximum drain current (ID)	1.3 A	1.3 A	1.3 A	1.3 A
Maximum drain-source on-resistance	0.53 Ω	0.53 Ω	0.53 Ω	0.53 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
Number of components	2	2	2	2
Number of terminals	8	8	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	6 A	6 A	6 A	6 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

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