Power Field-Effect Transistor, 1.3A I(D), 100V, 0.53ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
| Parameter Name | Attribute value |
| Maker | Fairchild |
| Parts packaging code | SOT |
| package instruction | SMALL OUTLINE, R-PDSO-G8 |
| Contacts | 8 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 1.3 A |
| Maximum drain-source on-resistance | 0.53 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G8 |
| Number of components | 2 |
| Number of terminals | 8 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 6 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| FDS3601NL86Z | FDS3601NS62Z | FDS3601NL99Z | FDS3601ND84Z | |
|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 1.3A I(D), 100V, 0.53ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Power Field-Effect Transistor, 1.3A I(D), 100V, 0.53ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Power Field-Effect Transistor, 1.3A I(D), 100V, 0.53ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Power Field-Effect Transistor, 1.3A I(D), 100V, 0.53ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 |
| Maker | Fairchild | Fairchild | Fairchild | Fairchild |
| Parts packaging code | SOT | SOT | SOT | SOT |
| package instruction | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 | SMALL OUTLINE, R-PDSO-G8 |
| Contacts | 8 | 8 | 8 | 8 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Is Samacsys | N | N | N | N |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | 100 V | 100 V | 100 V |
| Maximum drain current (ID) | 1.3 A | 1.3 A | 1.3 A | 1.3 A |
| Maximum drain-source on-resistance | 0.53 Ω | 0.53 Ω | 0.53 Ω | 0.53 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
| Number of components | 2 | 2 | 2 | 2 |
| Number of terminals | 8 | 8 | 8 | 8 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 6 A | 6 A | 6 A | 6 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 |
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