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WS57C256F-55TMB

Description
MILITARY HIGH SPEED 32K x 8 CMOS EPROM
Categorystorage    storage   
File Size13KB,2 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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WS57C256F-55TMB Overview

MILITARY HIGH SPEED 32K x 8 CMOS EPROM

WS57C256F-55TMB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeDIP
package instruction0.300 INCH, CERDIP-28
Contacts28
Reach Compliance Code_compli
ECCN codeEAR99
Maximum access time55 ns
I/O typeCOMMON
JESD-30 codeR-GDIP-T28
JESD-609 codee0
length37.085 mm
memory density262144 bi
Memory IC TypeUVPROM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize32KX8
Output characteristics3-STATE
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeWDIP
Encapsulate equivalent codeDIP28,.3
Package shapeRECTANGULAR
Package formIN-LINE, WINDOW
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage12.5 V
Certification statusNot Qualified
Filter levelMIL-STD-883 Class B
Maximum seat height5.08 mm
Maximum standby current0.0005 A
Maximum slew rate0.133 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm

WS57C256F-55TMB Related Products

WS57C256F-55TMB WS57C256F-70DMB WS57C256F-70CMB WS57C256F-70 WS57C256F-55DMB WS57C256F-55CMB WS57C256F-55 WS57C256F-1
Description MILITARY HIGH SPEED 32K x 8 CMOS EPROM MILITARY HIGH SPEED 32K x 8 CMOS EPROM MILITARY HIGH SPEED 32K x 8 CMOS EPROM MILITARY HIGH SPEED 32K x 8 CMOS EPROM MILITARY HIGH SPEED 32K x 8 CMOS EPROM MILITARY HIGH SPEED 32K x 8 CMOS EPROM MILITARY HIGH SPEED 32K x 8 CMOS EPROM MILITARY HIGH SPEED 32K x 8 CMOS EPROM
Is it Rohs certified? incompatible incompatible incompatible - incompatible incompatible - -
Parts packaging code DIP DIP QFJ - DIP QFJ - -
package instruction 0.300 INCH, CERDIP-28 0.600 INCH, CERDIP-28 CERAMIC, LLCC-32 - 0.600 INCH, CERDIP-28 CERAMIC, LLCC-32 - -
Contacts 28 28 32 - 28 32 - -
Reach Compliance Code _compli _compli _compli - _compli _compli - -
ECCN code EAR99 EAR99 EAR99 - EAR99 EAR99 - -
Maximum access time 55 ns 70 ns 70 ns - 55 ns 55 ns - -
I/O type COMMON COMMON COMMON - COMMON COMMON - -
JESD-30 code R-GDIP-T28 R-GDIP-T28 R-CQCC-N32 - R-GDIP-T28 R-CQCC-N32 - -
JESD-609 code e0 e0 e0 - e0 e0 - -
length 37.085 mm 37.215 mm 13.97 mm - 37.215 mm 13.97 mm - -
memory density 262144 bi 262144 bi 262144 bi - 262144 bi 262144 bi - -
Memory IC Type UVPROM UVPROM UVPROM - UVPROM UVPROM - -
memory width 8 8 8 - 8 8 - -
Number of functions 1 1 1 - 1 1 - -
Number of terminals 28 28 32 - 28 32 - -
word count 32768 words 32768 words 32768 words - 32768 words 32768 words - -
character code 32000 32000 32000 - 32000 32000 - -
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS - -
Maximum operating temperature 125 °C 125 °C 125 °C - 125 °C 125 °C - -
Minimum operating temperature -55 °C -55 °C -55 °C - -55 °C -55 °C - -
organize 32KX8 32KX8 32KX8 - 32KX8 32KX8 - -
Output characteristics 3-STATE 3-STATE 3-STATE - 3-STATE 3-STATE - -
Package body material CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED - CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED - -
encapsulated code WDIP WDIP WQCCN - WDIP WQCCN - -
Encapsulate equivalent code DIP28,.3 DIP28,.6 LCC32,.45X.55 - DIP28,.6 LCC32,.45X.55 - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR - -
Package form IN-LINE, WINDOW IN-LINE, WINDOW CHIP CARRIER, WINDOW - IN-LINE, WINDOW CHIP CARRIER, WINDOW - -
Parallel/Serial PARALLEL PARALLEL PARALLEL - PARALLEL PARALLEL - -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - -
power supply 5 V 5 V 5 V - 5 V 5 V - -
Programming voltage 12.5 V 12.5 V 12.5 V - 12.5 V 12.5 V - -
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified - -
Filter level MIL-STD-883 Class B MIL-STD-883 Class B MIL-STD-883 Class B - MIL-STD-883 Class B MIL-STD-883 Class B - -
Maximum seat height 5.08 mm 5.72 mm 3.3 mm - 5.72 mm 3.3 mm - -
Maximum standby current 0.0005 A 0.0005 A 0.0005 A - 0.0005 A 0.0005 A - -
Maximum slew rate 0.133 mA 0.117 mA 0.117 mA - 0.133 mA 0.133 mA - -
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V - 5.5 V 5.5 V - -
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V - 4.5 V 4.5 V - -
Nominal supply voltage (Vsup) 5 V 5 V 5 V - 5 V 5 V - -
surface mount NO NO YES - NO YES - -
technology CMOS CMOS CMOS - CMOS CMOS - -
Temperature level MILITARY MILITARY MILITARY - MILITARY MILITARY - -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - -
Terminal form THROUGH-HOLE THROUGH-HOLE NO LEAD - THROUGH-HOLE NO LEAD - -
Terminal pitch 2.54 mm 2.54 mm 1.27 mm - 2.54 mm 1.27 mm - -
Terminal location DUAL DUAL QUAD - DUAL QUAD - -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - -
width 7.62 mm 15.24 mm 11.43 mm - 15.24 mm 11.43 mm - -
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