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WS57C256F-1

Description
MILITARY HIGH SPEED 32K x 8 CMOS EPROM
File Size13KB,2 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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WS57C256F-1 Overview

MILITARY HIGH SPEED 32K x 8 CMOS EPROM

WS57C256F-1 Related Products

WS57C256F-1 WS57C256F-70DMB WS57C256F-70CMB WS57C256F-70 WS57C256F-55TMB WS57C256F-55DMB WS57C256F-55CMB WS57C256F-55
Description MILITARY HIGH SPEED 32K x 8 CMOS EPROM MILITARY HIGH SPEED 32K x 8 CMOS EPROM MILITARY HIGH SPEED 32K x 8 CMOS EPROM MILITARY HIGH SPEED 32K x 8 CMOS EPROM MILITARY HIGH SPEED 32K x 8 CMOS EPROM MILITARY HIGH SPEED 32K x 8 CMOS EPROM MILITARY HIGH SPEED 32K x 8 CMOS EPROM MILITARY HIGH SPEED 32K x 8 CMOS EPROM
Is it Rohs certified? - incompatible incompatible - incompatible incompatible incompatible -
Parts packaging code - DIP QFJ - DIP DIP QFJ -
package instruction - 0.600 INCH, CERDIP-28 CERAMIC, LLCC-32 - 0.300 INCH, CERDIP-28 0.600 INCH, CERDIP-28 CERAMIC, LLCC-32 -
Contacts - 28 32 - 28 28 32 -
Reach Compliance Code - _compli _compli - _compli _compli _compli -
ECCN code - EAR99 EAR99 - EAR99 EAR99 EAR99 -
Maximum access time - 70 ns 70 ns - 55 ns 55 ns 55 ns -
I/O type - COMMON COMMON - COMMON COMMON COMMON -
JESD-30 code - R-GDIP-T28 R-CQCC-N32 - R-GDIP-T28 R-GDIP-T28 R-CQCC-N32 -
JESD-609 code - e0 e0 - e0 e0 e0 -
length - 37.215 mm 13.97 mm - 37.085 mm 37.215 mm 13.97 mm -
memory density - 262144 bi 262144 bi - 262144 bi 262144 bi 262144 bi -
Memory IC Type - UVPROM UVPROM - UVPROM UVPROM UVPROM -
memory width - 8 8 - 8 8 8 -
Number of functions - 1 1 - 1 1 1 -
Number of terminals - 28 32 - 28 28 32 -
word count - 32768 words 32768 words - 32768 words 32768 words 32768 words -
character code - 32000 32000 - 32000 32000 32000 -
Operating mode - ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS -
Maximum operating temperature - 125 °C 125 °C - 125 °C 125 °C 125 °C -
Minimum operating temperature - -55 °C -55 °C - -55 °C -55 °C -55 °C -
organize - 32KX8 32KX8 - 32KX8 32KX8 32KX8 -
Output characteristics - 3-STATE 3-STATE - 3-STATE 3-STATE 3-STATE -
Package body material - CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED - CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED -
encapsulated code - WDIP WQCCN - WDIP WDIP WQCCN -
Encapsulate equivalent code - DIP28,.6 LCC32,.45X.55 - DIP28,.3 DIP28,.6 LCC32,.45X.55 -
Package shape - RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR -
Package form - IN-LINE, WINDOW CHIP CARRIER, WINDOW - IN-LINE, WINDOW IN-LINE, WINDOW CHIP CARRIER, WINDOW -
Parallel/Serial - PARALLEL PARALLEL - PARALLEL PARALLEL PARALLEL -
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
power supply - 5 V 5 V - 5 V 5 V 5 V -
Programming voltage - 12.5 V 12.5 V - 12.5 V 12.5 V 12.5 V -
Certification status - Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified -
Filter level - MIL-STD-883 Class B MIL-STD-883 Class B - MIL-STD-883 Class B MIL-STD-883 Class B MIL-STD-883 Class B -
Maximum seat height - 5.72 mm 3.3 mm - 5.08 mm 5.72 mm 3.3 mm -
Maximum standby current - 0.0005 A 0.0005 A - 0.0005 A 0.0005 A 0.0005 A -
Maximum slew rate - 0.117 mA 0.117 mA - 0.133 mA 0.133 mA 0.133 mA -
Maximum supply voltage (Vsup) - 5.5 V 5.5 V - 5.5 V 5.5 V 5.5 V -
Minimum supply voltage (Vsup) - 4.5 V 4.5 V - 4.5 V 4.5 V 4.5 V -
Nominal supply voltage (Vsup) - 5 V 5 V - 5 V 5 V 5 V -
surface mount - NO YES - NO NO YES -
technology - CMOS CMOS - CMOS CMOS CMOS -
Temperature level - MILITARY MILITARY - MILITARY MILITARY MILITARY -
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form - THROUGH-HOLE NO LEAD - THROUGH-HOLE THROUGH-HOLE NO LEAD -
Terminal pitch - 2.54 mm 1.27 mm - 2.54 mm 2.54 mm 1.27 mm -
Terminal location - DUAL QUAD - DUAL DUAL QUAD -
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
width - 15.24 mm 11.43 mm - 7.62 mm 15.24 mm 11.43 mm -
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