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MGB19N35CL

Description
Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK
File Size275KB,12 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MGB19N35CL Overview

Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK

MGP19N35CL,
MGB19N35CL
Preferred Device
Ignition IGBT
19 Amps, 350 Volts
N−Channel TO−220 and D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Ideal for IGBT−On−Coil or Distributorless Ignition System
Applications
High Pulsed Current Capability up to 50 A
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
Optional Gate Resistor (R
G
)
MAXIMUM RATINGS
(−55°C
T
J
175°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current
Continuous
@ T
C
= 25°C
Pulsed
ESD (Human Body Model)
R = 1500
Ω,
C = 100 pF
ESD (Machine Model) R = 0
Ω,
C = 200 pF
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Temperature Range
Symbol
V
CES
V
CER
V
GE
I
C
ESD
8.0
ESD
P
D
T
J
, T
stg
800
165
1.1
−55
to
175
V
Watts
W/°C
°C
1
Gate
2
Collector
3
Emitter
G19N35CL
YWW
G19N35CL
YWW
1
Gate
3
Emitter
Value
380
380
22
19
50
Unit
V
DC
V
DC
V
DC
A
DC
A
AC
kV
1
2
3
TO−220AB
CASE 221A
STYLE 9
http://onsemi.com
19 AMPERES
350 VOLTS (Clamped)
V
CE(on)
@ 10 A = 1.8 V Max
N−Channel
C
G
R
GE
4
E
4
1
2
3
D
2
PAK
CASE 418B
STYLE 4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Collector
4
Collector
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE
CHARACTERISTICS
(−55°C
T
J
175°C)
Characteristic
Single Pulse Collector−to−Emitter Avalanche
Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 22.4 A,
L = 2.0 mH, Starting T
J
= 25°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 17.4 A,
L = 2.0 mH, Starting T
J
= 150°C
Reverse Avalanche Energy
V
CC
= 100 V, V
GE
= 20 V, L = 3.0 mH,
Pk I
L
= 25.8 A, Starting T
J
= 25_C
Symbol
E
AS
500
300
E
AS(R)
mJ
1000
Value
Unit
mJ
2
Collector
G19N35CL = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
MGP19N35CL
MGB19N35CLT4
Package
TO−220
D2PAK
Shipping
50 Units/Rail
800 Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
February, 2005
Rev. XXX
1
Publication Order Number:
MGP19N35CL/D

MGB19N35CL Related Products

MGB19N35CL MGP19N35CL MGB19N35CLT4
Description Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK
Is it Rohs certified? - incompatible incompatible
Maker - ON Semiconductor ON Semiconductor
Parts packaging code - TO-220AB SFM
package instruction - CASE 221A-09, 3 PIN CASE 418B-03, D2PAK-3
Contacts - 3 4
Manufacturer packaging code - CASE 221A-09 CASE 418B-03
Reach Compliance Code - _compli _compli
Shell connection - COLLECTOR COLLECTOR
Maximum collector current (IC) - 19 A 19 A
Collector-emitter maximum voltage - 380 V 380 V
Configuration - SINGLE WITH BUILT-IN DIODE AND RESISTOR SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum landing time (tf) - 22000 ns 22000 ns
Gate emitter threshold voltage maximum - 2 V 2 V
Gate-emitter maximum voltage - 22 V 22 V
JESD-30 code - R-PSFM-T3 R-PSSO-G2
JESD-609 code - e0 e0
Number of components - 1 1
Number of terminals - 3 2
Maximum operating temperature - 175 °C 175 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 165 W 165 W
Certification status - Not Qualified Not Qualified
Maximum rise time (tr) - 6000 ns 6000 ns
surface mount - NO YES
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - THROUGH-HOLE GULL WING
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
transistor applications - AUTOMOTIVE IGNITION AUTOMOTIVE IGNITION
Transistor component materials - SILICON SILICON
Nominal off time (toff) - 25000 ns 25000 ns
Nominal on time (ton) - 6500 ns 6500 ns
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