MGP19N35CL,
MGB19N35CL
Preferred Device
Ignition IGBT
19 Amps, 350 Volts
N−Channel TO−220 and D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
•
Ideal for IGBT−On−Coil or Distributorless Ignition System
Applications
•
High Pulsed Current Capability up to 50 A
•
Gate−Emitter ESD Protection
•
Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
•
Integrated ESD Diode Protection
•
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
•
Low Saturation Voltage
•
Optional Gate Resistor (R
G
)
MAXIMUM RATINGS
(−55°C
≤
T
J
≤
175°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current
−
Continuous
@ T
C
= 25°C
−
Pulsed
ESD (Human Body Model)
R = 1500
Ω,
C = 100 pF
ESD (Machine Model) R = 0
Ω,
C = 200 pF
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Temperature Range
Symbol
V
CES
V
CER
V
GE
I
C
ESD
8.0
ESD
P
D
T
J
, T
stg
800
165
1.1
−55
to
175
V
Watts
W/°C
°C
1
Gate
2
Collector
3
Emitter
G19N35CL
YWW
G19N35CL
YWW
1
Gate
3
Emitter
Value
380
380
22
19
50
Unit
V
DC
V
DC
V
DC
A
DC
A
AC
kV
1
2
3
TO−220AB
CASE 221A
STYLE 9
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19 AMPERES
350 VOLTS (Clamped)
V
CE(on)
@ 10 A = 1.8 V Max
N−Channel
C
G
R
GE
4
E
4
1
2
3
D
2
PAK
CASE 418B
STYLE 4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Collector
4
Collector
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE
CHARACTERISTICS
(−55°C
≤
T
J
≤
175°C)
Characteristic
Single Pulse Collector−to−Emitter Avalanche
Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 22.4 A,
L = 2.0 mH, Starting T
J
= 25°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 17.4 A,
L = 2.0 mH, Starting T
J
= 150°C
Reverse Avalanche Energy
V
CC
= 100 V, V
GE
= 20 V, L = 3.0 mH,
Pk I
L
= 25.8 A, Starting T
J
= 25_C
Symbol
E
AS
500
300
E
AS(R)
mJ
1000
Value
Unit
mJ
2
Collector
G19N35CL = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
MGP19N35CL
MGB19N35CLT4
Package
TO−220
D2PAK
Shipping
50 Units/Rail
800 Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
February, 2005
−
Rev. XXX
1
Publication Order Number:
MGP19N35CL/D
MGP19N35CL, MGB19N35CL
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
TO−220
D
2
PAK (Note 1.)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Symbol
R
θJC
R
θJA
R
θJA
T
L
Value
0.9
62.5
50
275
°C
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
BV
CES
I
C
= 2.0 mA
I
C
= 10 mA
Zero Gate Voltage Collector Current
g
I
CES
T
J
=
−40°C
to
150°C
T
J
=
−40°C
to
150°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
Reverse Collector−Emitter Clamp Voltage
p
g
B
VCES(R)
I
C
=
−75
mA
75 A
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor (Optional)
Gate Emitter Resistor
BV
GES
I
GES
R
G
R
GE
I
G
= 5.0 mA
V
GE
= 10 V
−
−
T
J
=
−40°C
to
150°C
T
J
=
−40°C
to
150°C
T
J
=
−40°C
to
150°C
T
J
=
−40°C
to
150°C
320
330
−
−
−
−
−
−
25
25
25
17
384
−
10
350
360
1.5
15
0.7
0.35
10
0.05
33
36
30
20
500
70
20
380
380
20
40*
1.5
1.0
20*
0.5
50
50
50
22
1000
−
26
V
DC
µA
DC
Ω
V
DC
V
CE
= 300 V
V,
V
GE
= 0 V
µ
µA
DC
Reverse Collector−Emitter Leakage Current
g
I
ECS
mA
V
CE
=
−24
V
24
V
DC
kΩ
ON CHARACTERISTICS
(Note 2.)
g
Gate Threshold Voltage
V
GE(th)
I
C
= 1.0 mA,
10 A
V
GE
= V
CE
−
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
−
1.4
0.75
1.6
−
1.7
1.1
1.9
4.4
2.0
1.4
2.1*
−
mV/°C
V
DC
Threshold Temperature Coefficient
(Negative)
−
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width
v
300
µS,
Duty Cycle
v
2%.
*Maximum Value of Characteristic across Temperature Range.
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2
MGP19N35CL, MGB19N35CL
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
ON CHARACTERISTICS (continued)
(Note 3.)
g
Collector−to−Emitter On−Voltage
V
CE(on)
I
C
= 6.0 A
6 0 A,
V
GE
= 4.0 V
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
T
J
= 150°C
T
J
=
−40°C
to
150°C
1.0
0.8
1.15
1.2
1.0
1.3
1.5
1.35
1.5
1.7
1.6
1.7
2.0
2.0
2.0
−
8.0
1.25
1.05
1.4
1.5
1.3
1.6
1.75
1.65
1.8
2.0
1.9
2.0
2.25
2.3
2.2
1.3
15
1.6
1.4
1.75*
1.8
1.6
1.9*
2.1
1.95
2.1*
2.3
2.2
2.3*
2.6
2.7*
2.6
1.8
25
V
DC
Mhos
V
DC
I
C
= 10 A
A,
V
GE
= 4.0 V
I
C
= 15 A
A,
V
GE
= 4.0 V
I
C
= 20 A
A,
V
GE
= 4.0 V
I
C
= 25 A
A,
V
GE
= 4.0 V
Collector−to−Emitter On−Voltage
Forward Transconductance
V
CE(on)
gfs
I
C
= 10 A, V
GE
= 4.5 V
V
CE
= 5.0 V, I
C
= 6.0 A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
C
ISS
C
OSS
C
RSS
−
V
CC
= 25 V V
GE
= 0 V
V,
f = 1.0 MHz
T
J
=
−40°C
to
40°C t
150 C
150°C
−
−
1500
130
6.0
1800
160
8.0
p
pF
SWITCHING CHARACTERISTICS
(Note 3.)
y
(
)
Turn−Off Delay Time (Inductive)
t
d(off)
t
f
t
d(off)
t
f
t
d(on)
t
r
V
CC
= 300 V, I
C
= 10 A
R
G
= 1 0 kΩ L = 300
µH
1.0 kΩ,
H
V
CC
= 300 V, I
C
= 10 A
R
G
= 1 0 kΩ L = 300
µH
1.0 kΩ,
H
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1 0 kΩ R
L
= 46
Ω
1.0 kΩ,
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1 0 kΩ R
L
= 46
Ω
1.0 kΩ,
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1 0 kΩ R
L
= 1 5
Ω
1.0 kΩ,
1.5
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1 0 kΩ R
L
= 1 5
Ω
1.0 kΩ,
1.5
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
−
−
−
−
−
−
−
−
−
−
−
−
5.0
6.0
6.0
11
6.0
7.0
12
18
1.5
1.5
4.0
5.0
10
10
10
15*
10
10
20
22*
2.0
2.0
6.0
6.0
µ
µSec
µ
µSec
µ
µSec
Fall Time (
(Inductive)
)
Turn−Off Delay Time (
y
(Resistive)
)
Fall Time (
(Resistive)
)
Turn−On Delay Time
y
Rise Time
3. Pulse Test: Pulse Width
v
300
µS,
Duty Cycle
v
2%.
*Maximum Value of Characteristic across Temperature Range.
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3
MGP19N35CL, MGB19N35CL
TYPICAL ELECTRICAL CHARACTERISTICS
(unless otherwise noted)
60
I
C,
COLLECTOR CURRENT (AMPS)
50
V
GE
= 5.0 V
40
T
J
= 25°C
30
20
10
0
V
GE
= 3.0 V
V
GE
= 2.5 V
0
1
2
3
4
5
6
7
8
V
GE
= 4.5 V
V
GE
= 3.5 V
V
GE
= 4.0 V
I
C,
COLLECTOR CURRENT (AMPS)
V
GE
= 10.0 V
60
V
GE
= 10.0 V
50
V
GE
= 5.0 V
40
T
J
= 150°C
30
20
10
0
V
GE
= 3.5 V
V
GE
= 3.0 V
V
GE
= 2.5 V
V
GE
= 4.0 V
V
GE
= 4.5 V
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics
60
I
C,
COLLECTOR CURRENT (AMPS)
55
50
45
40
35
30
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
T
J
= 25°C
T
J
= 150°C
T
J
=
−40°C
3
3.5
4
4.5
5
V
CE
= 10 V
3.0
V
GE
= 5.0 V
2.5
2.0
1.5
1.0
0.5
0.0
−50
I
C
= 15 A
I
C
= 10 A
I
C
= 20 A
I
C
= 25 A
I
C
= 5 A
−25
0
25
50
75
100
125
150
V
GE
, GATE TO EMITTER VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector−to−Emitter Saturation
Voltage vs. Junction Temperature
2.5
THRESHOLD VOLTAGE (VOLTS)
10000
1000
C
iss
Mean + 4
σ
2.0
1.5
1.0
Mean
I
C
= 1 mA
C, CAPACITANCE (pF)
C
oss
100
10
1
C
rss
Mean
−
4
σ
0.5
0.0
−50
0
0
20
40
60
80
100 120
140 160 180
−25
0
25
50
75
100
125
150
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
TEMPERATURE (°C)
Figure 5. Capacitance Variation
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4
Figure 6. Threshold Voltage vs. Temperature
MGP19N35CL, MGB19N35CL
14
12
SWITCHING TIME (µS)
10
8
6
4
2
0
−50
−25
0
25
50
75
100
125
150
t
d(off)
V
CC
= 300 V
V
GE
= 5.0 V
R
G
= 1000
Ω
I
C
= 10 A
L = 300
µH
14
12
SWITCHING TIME (µS)
10
8
6
4
2
0
0
2
4
6
8
10
t
d(off)
V
CC
= 300 V
V
GE
= 5.0 V
R
G
= 1000
Ω
T
J
= 150°C
L = 300
µH
12
14
16
I
C
, COLLECTOR CURRENT (AMPS)
t
f
t
f
T
C
, CASE TEMPERATURE (°C)
Figure 7. Switching Speed vs. Case
Temperature
Figure 8. Switching Speed vs. Collector
Current
30
I
L
, LATCH CURRENT (AMPS)
I
L
, LATCH CURRENT (AMPS)
25
T = 25°C
20
15
T = 150°C
10
5
0
V
CC
= 50 V
V
GE
= 5.0 V
R
G
= 1000
Ω
30
25
20
15
10
5
V
CC
= 50 V
V
GE
= 5.0 V
R
G
= 1000
Ω
0
25
50
75
100
125
150
175
L = 3.0 mH
L = 6.0 mH
L = 2.0 mH
0
2
4
6
8
10
0
−50 −25
INDUCTOR (mH)
TEMPERATURE (°C)
Figure 9. Minimum Open Secondary Latch
Current vs. Inductor
30
I
L
, LATCH CURRENT (AMPS)
25
20
15
10
5
0
T = 150°C
I
L
, LATCH CURRENT (AMPS)
T = 25°C
V
CC
= 50 V
V
GE
= 5.0 V
R
G
= 1000
Ω
30
Figure 10. Minimum Open Secondary Latch
Current vs. Temperature
L = 2.0 mH
25
L = 3.0 mH
20
15
10
5
V
CC
= 50 V
V
GE
= 5.0 V
R
G
= 1000
Ω
0
25
50
75
100
125
150
175
L = 6.0 mH
0
1
2
3
4
5
6
7
8
9
10
0
−50 −25
INDUCTOR (mH)
TEMPERATURE (°C)
Figure 11. Typical Open Secondary Latch vs.
Inductor
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5
Figure 12. Typical Open Secondary Latch vs.
Temperature
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