IPI05N03LA datasheet, PDF - EEWORLD Datasheet

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IPI05N03LA: DescriptionOptiMOS 2 Power-Transistor; CategoryDiscrete semiconductor The transistor; File Size341KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPI05N03LA Overview

OptiMOS 2 Power-Transistor

IPI05N03LA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-262AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	190 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	25 V
Maximum drain current (Abs) (ID)	80 A
Maximum drain current (ID)	80 A
Maximum drain-source on-resistance	0.0081 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	94 W
Maximum pulsed drain current (IDM)	385 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

IPI05N03LA Related Products

	IPI05N03LA	IPB05N03LA	IPP05N03LA	IPB05N03LAT	IPB05N03LA G
Description	OptiMOS 2 Power-Transistor	OptiMOS 2 Power-Transistor	OptiMOS 2 Power-Transistor	MOSFET N-CH 25V 80A D2PAK	MOSFET N-CH 25V 80A D2PAK
Is it Rohs certified?	conform to	incompatible	conform to	-	-
Parts packaging code	TO-262AA	D2PAK	TO-220AB	-	-
package instruction	IN-LINE, R-PSIP-T3	PLASTIC, TO-263, 3 PIN	ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN	-	-
Contacts	3	4	3	-	-
Reach Compliance Code	compli	compli	compli	-	-
ECCN code	EAR99	EAR99	EAR99	-	-
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	-	-
Avalanche Energy Efficiency Rating (Eas)	190 mJ	190 mJ	190 mJ	-	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	-
Minimum drain-source breakdown voltage	25 V	25 V	25 V	-	-
Maximum drain current (Abs) (ID)	80 A	80 A	80 A	-	-
Maximum drain current (ID)	80 A	80 A	80 A	-	-
Maximum drain-source on-resistance	0.0081 Ω	0.0078 Ω	0.0081 Ω	-	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	-
JEDEC-95 code	TO-262AA	TO-263AB	TO-220AB	-	-
JESD-30 code	R-PSIP-T3	R-PSSO-G2	R-PSFM-T3	-	-
JESD-609 code	e3	e0	e3	-	-
Number of components	1	1	1	-	-
Number of terminals	3	2	3	-	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	-
Maximum operating temperature	175 °C	175 °C	175 °C	-	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	-
Package form	IN-LINE	SMALL OUTLINE	FLANGE MOUNT	-	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	255	NOT SPECIFIED	-	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	-
Maximum power dissipation(Abs)	94 W	94 W	94 W	-	-
Maximum pulsed drain current (IDM)	385 A	385 A	385 A	-	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-	-
surface mount	NO	YES	NO	-	-
Terminal surface	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	MATTE TIN	-	-
Terminal form	THROUGH-HOLE	GULL WING	THROUGH-HOLE	-	-
Terminal location	SINGLE	SINGLE	SINGLE	-	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	-	-
Transistor component materials	SILICON	SILICON	SILICON	-	-

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