MOSFET N-CH 25V 80A D2PAK
| Parameter Name | Attribute value |
| FET type | N channel |
| technology | MOSFET (metal oxide) |
| Drain-source voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) at 25°C | 80A（Tc） |
| Drive voltage (maximum Rds On, minimum Rds On) | 4.5V，10V |
| Rds On (maximum value) when different Id, Vgs | 4.6 milliohms @ 55A, 10V |
| Vgs (th) (maximum value) when different Id | 2V @ 50µA |
| Gate charge (Qg) at different Vgs (maximum value) | 25nC @ 5V |
| Vgs (maximum value) | ±20V |
| Input capacitance (Ciss) at different Vds (maximum value) | 3110pF @ 15V |
| FET function | - |
| Power dissipation (maximum) | 94W（Tc） |
| Operating temperature | -55°C ~ 175°C（TJ） |
| Installation type | surface mount |
| Supplier device packaging | PG-TO263-3-2 |
| Package/casing | TO-263-3, D²Pak (2-lead + tab), TO-263AB |
| IPB05N03LA G | IPB05N03LA | IPI05N03LA | IPP05N03LA | IPB05N03LAT | |
|---|---|---|---|---|---|
| Description | MOSFET N-CH 25V 80A D2PAK | OptiMOS 2 Power-Transistor | OptiMOS 2 Power-Transistor | OptiMOS 2 Power-Transistor | MOSFET N-CH 25V 80A D2PAK |
| Is it Rohs certified? | - | incompatible | conform to | conform to | - |
| Parts packaging code | - | D2PAK | TO-262AA | TO-220AB | - |
| package instruction | - | PLASTIC, TO-263, 3 PIN | IN-LINE, R-PSIP-T3 | ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | - |
| Contacts | - | 4 | 3 | 3 | - |
| Reach Compliance Code | - | compli | compli | compli | - |
| ECCN code | - | EAR99 | EAR99 | EAR99 | - |
| Other features | - | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | - |
| Avalanche Energy Efficiency Rating (Eas) | - | 190 mJ | 190 mJ | 190 mJ | - |
| Configuration | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - |
| Minimum drain-source breakdown voltage | - | 25 V | 25 V | 25 V | - |
| Maximum drain current (Abs) (ID) | - | 80 A | 80 A | 80 A | - |
| Maximum drain current (ID) | - | 80 A | 80 A | 80 A | - |
| Maximum drain-source on-resistance | - | 0.0078 Ω | 0.0081 Ω | 0.0081 Ω | - |
| FET technology | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| JEDEC-95 code | - | TO-263AB | TO-262AA | TO-220AB | - |
| JESD-30 code | - | R-PSSO-G2 | R-PSIP-T3 | R-PSFM-T3 | - |
| JESD-609 code | - | e0 | e3 | e3 | - |
| Number of components | - | 1 | 1 | 1 | - |
| Number of terminals | - | 2 | 3 | 3 | - |
| Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| Maximum operating temperature | - | 175 °C | 175 °C | 175 °C | - |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| Package shape | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
| Package form | - | SMALL OUTLINE | IN-LINE | FLANGE MOUNT | - |
| Peak Reflow Temperature (Celsius) | - | 255 | NOT SPECIFIED | NOT SPECIFIED | - |
| Polarity/channel type | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | - |
| Maximum power dissipation(Abs) | - | 94 W | 94 W | 94 W | - |
| Maximum pulsed drain current (IDM) | - | 385 A | 385 A | 385 A | - |
| Certification status | - | Not Qualified | Not Qualified | Not Qualified | - |
| surface mount | - | YES | NO | NO | - |
| Terminal surface | - | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | MATTE TIN | - |
| Terminal form | - | GULL WING | THROUGH-HOLE | THROUGH-HOLE | - |
| Terminal location | - | SINGLE | SINGLE | SINGLE | - |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| transistor applications | - | SWITCHING | SWITCHING | SWITCHING | - |
| Transistor component materials | - | SILICON | SILICON | SILICON | - |
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