OptiMOS 2 Power-Transistor
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Infineon |
| Parts packaging code | D2PAK |
| package instruction | PLASTIC, TO-263, 3 PIN |
| Contacts | 4 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Other features | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Efficiency Rating (Eas) | 190 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 25 V |
| Maximum drain current (Abs) (ID) | 80 A |
| Maximum drain current (ID) | 80 A |
| Maximum drain-source on-resistance | 0.0078 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e0 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 255 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 94 W |
| Maximum pulsed drain current (IDM) | 385 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| IPB05N03LA | IPI05N03LA | IPP05N03LA | IPB05N03LAT | IPB05N03LA G | |
|---|---|---|---|---|---|
| Description | OptiMOS 2 Power-Transistor | OptiMOS 2 Power-Transistor | OptiMOS 2 Power-Transistor | MOSFET N-CH 25V 80A D2PAK | MOSFET N-CH 25V 80A D2PAK |
| Is it Rohs certified? | incompatible | conform to | conform to | - | - |
| Parts packaging code | D2PAK | TO-262AA | TO-220AB | - | - |
| package instruction | PLASTIC, TO-263, 3 PIN | IN-LINE, R-PSIP-T3 | ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | - | - |
| Contacts | 4 | 3 | 3 | - | - |
| Reach Compliance Code | compli | compli | compli | - | - |
| ECCN code | EAR99 | EAR99 | EAR99 | - | - |
| Other features | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | - | - |
| Avalanche Energy Efficiency Rating (Eas) | 190 mJ | 190 mJ | 190 mJ | - | - |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | - |
| Minimum drain-source breakdown voltage | 25 V | 25 V | 25 V | - | - |
| Maximum drain current (Abs) (ID) | 80 A | 80 A | 80 A | - | - |
| Maximum drain current (ID) | 80 A | 80 A | 80 A | - | - |
| Maximum drain-source on-resistance | 0.0078 Ω | 0.0081 Ω | 0.0081 Ω | - | - |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | - |
| JEDEC-95 code | TO-263AB | TO-262AA | TO-220AB | - | - |
| JESD-30 code | R-PSSO-G2 | R-PSIP-T3 | R-PSFM-T3 | - | - |
| JESD-609 code | e0 | e3 | e3 | - | - |
| Number of components | 1 | 1 | 1 | - | - |
| Number of terminals | 2 | 3 | 3 | - | - |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | - |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | - | - |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | - |
| Package form | SMALL OUTLINE | IN-LINE | FLANGE MOUNT | - | - |
| Peak Reflow Temperature (Celsius) | 255 | NOT SPECIFIED | NOT SPECIFIED | - | - |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | - |
| Maximum power dissipation(Abs) | 94 W | 94 W | 94 W | - | - |
| Maximum pulsed drain current (IDM) | 385 A | 385 A | 385 A | - | - |
| Certification status | Not Qualified | Not Qualified | Not Qualified | - | - |
| surface mount | YES | NO | NO | - | - |
| Terminal surface | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | MATTE TIN | - | - |
| Terminal form | GULL WING | THROUGH-HOLE | THROUGH-HOLE | - | - |
| Terminal location | SINGLE | SINGLE | SINGLE | - | - |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | - | - |
| Transistor component materials | SILICON | SILICON | SILICON | - | - |
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