Part Number | Manufacturer | Description | Datasheet |
---|---|---|---|
SM8S10A | UN semiconductor | 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB | Download |
SM8S10A | SUNMATE | 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB | Download |
SM8S10A | Vishay | 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB | Download |
SM8S10A | LGE | 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB | Download |
SM8S10A | SOCAY | 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB | Download |
SM8S10A | Dowosemi | SM8S10A automotive grade TVS diode, DO-218AB package, peak pulse power 6600W, complies with AEC-101Q certification standards, and can pass 7637-5a/5b load dump test requirements. | Download |
SM8S10A-2D | Vishay | Trans Voltage Suppressor Diode, 5200W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, PLASTIC PACKAGE-1 | Download |
SM8S10A2D | Vishay | Trans Voltage Suppressor Diode, 5200W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB | Download |
SM8S10A-E3/2D | Vishay | TVS DIODE 10V 17V DO218AB | Download |
SM8S10A-E3-2D | Vishay | ESD Suppressors / TVS Diodes 8W 10V Unidirect | Download |
SM8S10AHE3/2D | Vishay | tvs diode 10vwm 18.8vc do218ab | Download |
SM8S10AHE3-2D | Vishay | ESD Suppressors / TVS Diodes 8.0W 10V 5% Unidir AEC-Q101 Qualified | Download |
SM8S10AHE3/2E | Vishay | ESD Suppressor/TVS Diode 8.0W 10V 5% Unidir AEC-Q101 Qualified | Download |
SM8S10AT | Vishay | High Temperature Stability and High Reliability Conditions | Download |
SM8S10ATHE3-I | Vishay | ESD Suppressors / TVS Diodes 8W,10V 5%,SMD PAR | Download |
SM8S10ATHE3/I | Vishay | TVS DIODE 10V 17V DO218AC | Download |
Part Number | Datasheet |
---|---|
SM8S10A-2D 、 SM8S10A-2E 、 SM8S10A/2E | Download Datasheet |
SM8S10A2D 、 SM8S10A2E | Download Datasheet |
SM8S10A-E3/2D 、 SM8S10AHE3/2D | Download Datasheet |
SM8S10A-E3-2D 、 SM8S10AHE3-2D | Download Datasheet |
SM8S10AHE3/2E | Download Datasheet |
SM8S10A | Download Datasheet |
SM8S10AHE3_A/I | Download Datasheet |
SM8S10AT | Download Datasheet |
SM8S10ATHE3/I | Download Datasheet |
SM8S10ATHE3-I | Download Datasheet |
Part Number | SM8S10A-2D | SM8S10A-2E | SM8S10A/2E |
---|---|---|---|
Description | Trans Voltage Suppressor Diode, 5200W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, PLASTIC PACKAGE-1 | Trans Voltage Suppressor Diode, 5200W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, PLASTIC PACKAGE-1 | Trans Voltage Suppressor Diode, 10V V(RWM), Unidirectional, |
Reach Compliance Code | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 |
Diode type | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-609 code | e0 | e0 | e0 |
polarity | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL |
Maximum repetitive peak reverse voltage | 10 V | 10 V | 10 V |
surface mount | YES | YES | YES |
Terminal surface | TIN LEAD | TIN LEAD | Tin/Lead (Sn/Pb) |
package instruction | R-PSSO-C1 | R-PSSO-C1 | - |
Other features | LOW LEAKAGE CURRENT | LOW LEAKAGE CURRENT | - |
Maximum breakdown voltage | 12.3 V | 12.3 V | - |
Minimum breakdown voltage | 11.1 V | 11.1 V | - |
Shell connection | ANODE | ANODE | - |
Configuration | SINGLE | SINGLE | - |
Diode component materials | SILICON | SILICON | - |
JEDEC-95 code | DO-218AB | DO-218AB | - |
JESD-30 code | R-PSSO-C1 | R-PSSO-C1 | - |
Maximum non-repetitive peak reverse power dissipation | 5200 W | 5200 W | - |
Number of components | 1 | 1 | - |
Number of terminals | 1 | 1 | - |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
Package shape | RECTANGULAR | RECTANGULAR | - |
Package form | SMALL OUTLINE | SMALL OUTLINE | - |
Maximum power dissipation | 8 W | 8 W | - |
Certification status | Not Qualified | Not Qualified | - |
technology | AVALANCHE | AVALANCHE | - |
Terminal form | C BEND | C BEND | - |
Terminal location | SINGLE | SINGLE | - |
Maker | - | Vishay | Vishay |