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SM8S10AHE3/2D

Description
tvs diode 10vwm 18.8vc do218ab
CategoryDiscrete semiconductor    diode   
File Size94KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

SM8S10AHE3/2D Overview

tvs diode 10vwm 18.8vc do218ab

SM8S10AHE3/2D Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeDO-218
package instructionR-PSSO-C1
Contacts1
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY, PD-CASE
Maximum breakdown voltage12.3 V
Minimum breakdown voltage11.1 V
Breakdown voltage nominal value11.7 V
Shell connectionANODE
Maximum clamping voltage17 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-218AB
JESD-30 codeR-PSSO-C1
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation5200 W
Number of components1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
polarityUNIDIRECTIONAL
Maximum power dissipation8 W
Certification statusNot Qualified
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage10 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationSINGLE
Maximum time at peak reflow temperature30
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