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SM8S10A-2E

Description
Trans Voltage Suppressor Diode, 5200W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, PLASTIC PACKAGE-1
CategoryDiscrete semiconductor    diode   
File Size89KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SM8S10A-2E Overview

Trans Voltage Suppressor Diode, 5200W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, PLASTIC PACKAGE-1

SM8S10A-2E Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeDO-218
package instructionR-PSSO-C1
Contacts1
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
Maximum breakdown voltage12.3 V
Minimum breakdown voltage11.1 V
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-218AB
JESD-30 codeR-PSSO-C1
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation5200 W
Number of components1
Number of terminals1
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation8 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage10 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formC BEND
Terminal locationSINGLE

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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