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UF108G_AY_00001

Description
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
CategoryDiscrete semiconductor    diode   
File Size125KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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UF108G_AY_00001 Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,

UF108G_AY_00001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.1 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

UF108G_AY_00001 Preview

Download Datasheet
UF100G SERIES
GLASS PASSIVATED JUNCTION ULTRAFAST RECOVERY RECTIFIER
VOLTAGE
50 to 1000 Volts
CURRENT
1.0 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
• Exceeds environmental standards of MIL-S-19500/228.
• Ultra Fast recovery for high efficiency.
• Lead free in comply with EU RoHS 2002/95/EC directives.
0.205(5.2)
0.160(4.1)
0.034(0.86)
0.028(0.71)
MECHANICAL DATA
Terminals: Axial leads, solderable per MIL-STD-750,Method 2026
Polarity: Band denotes cathode
Mounting Position: Any
Weight: 0.0118 ounce, 0.336 gram
1.0(25.4)MIN.
Case: Molded plastic, DO-41
0.107(2.7)
0.080(2.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
PA RA ME TE R
Ma xi mum Re curre nt P e a k Re ve rs e Vo ltag e
Ma xi mum RMS Volta ge
Ma xi mum D C B lo ck i ng Vo lta g e
Ma xi mum A ve rag e F o rwa rd C urre nt .3 75 " (9 .5 mm)
le a d le ng th a t T
A
=5 5
O
C
P e ak F o rwa rd S urg e C urre nt : 8.3m s s i ng le half si ne -
wa ve sup e ri mp o s ed o n rated lo a d(JE D E C metho d )
Ma xi mum F o rwa rd Vo lta g e a t 1 .0 A
Ma xi mum D C Reve rs e C urre nt a t Ra te d
D C B loc k i ng Vo lta g e
Typ i c a l Juncti o n C a pa c i ta nce (No te 1 )
Typ i c a l The rma l Re si sta nce (No te 2 )
Ma xi mum Re ve rs e Re c o ve ry Ti me (No te 3 )
Op e ra ti ng Junc ti on a nd S to ra g e Temp e ra ture Ra ng e
T
J
=2 5
O
C
T
J
=1 25
O
C
S YM B OL
V
RRM
V
RMS
V
DC
I
I
UF 10 0 G
50
35
50
UF 10 1 G
100
70
100
UF 1 02 G
200
140
200
UF 10 4 G
4 00
28 0
4 00
1 .0
30
UF 1 0 6 G
60 0
420
60 0
UF 10 8 G
800
560
800
UF 1 0 1 0G
10 0 0
700
10 0 0
UNITS
V
V
V
A
A
F (AV
)
FSM
V
F
I
1 .0
1 .3
1 .0
150
17
60
50
-5 5 to +15 0
1.7
V
μA
R
C
J
R
θJ
A
t
rr
T
J
,T
S TG
pF
O
C / W
ns
O
1 00
C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Thermal Resistance from Junction to Ambient and from Junction to lead length 0.375”(9.5mm) P.C.B. mounted.
3. Reverse Recovery Time I
F
=.5A ,I
R
=1A , I
rr
=.25A
December 21,2010-REV.01
PAGE . 1
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