On May 10, the National Information Optoelectronics Innovation Center (NOEIC) official account published a blog post yesterday, announcing that it has teamed up with Pengcheng Laboratory to form an optoelectronic fusion joint team and successfully developed the country's first 2Tb/s silicon photonic interconnect chiplet. It also verified the 3D silicon-based optoelectronic chiplet architecture for the first time in China, achieving a single-chip unidirectional interconnection bandwidth of up to 8×256Gb/s.
2Tb/s silicon-based 3D integrated light-emitting chip Source: NOEIC
2Tb/s silicon-based 3D integrated photoreceiver chip Source: NOEIC
Based on the 1.6T silicon photonics interconnect chip in 2021, the team further broke through the optoelectronic collaborative design simulation method, developed a single-channel ultra-200G driver and TIA chip supporting silicon photonics, and mastered the silicon-based optoelectronic three-dimensional stacking packaging process technology, forming a complete set of 3D core integration solutions based on silicon photonics chips.
Lateral microscopic structure of silicon photonic interconnect core particles Source: NOEIC
After system transmission testing, the TDECQ of the 8 channels was within 2dB at the 224Gb/s PAM4 optical signal rate of the next-generation optical module standard. Through further link equalization, the maximum supported rate is 8×256Gb/s, and the single-chip unidirectional interconnection bandwidth is up to 2Tb/s.
8×224Gb/s silicon-based optical transmitter chip output eye diagram Source: NOEIC
The results will be widely used in various optical module products such as CPO, NPO, LPO, LRO required by the next-generation computing systems and data centers, exploring a feasible path for the domestic information optoelectronic technology to take the lead in breaking through.
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