TMBFR310 datasheet, PDF - EEWORLD Datasheet

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TMBFR310: CategoryDiscrete semiconductor Rectifier bridge; File Size602KB，3 Pages; ManufacturerChongqing Pingwei Enterprise co.,Ltd.; Websitehttp://www.perfectway.cn; Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).

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TMBFR310

SINGLE PHASE3.0AMPS. GLASS PASSIVATED FAST BRIDGE RECTIFIERS

FEATURE

.Glass

passivated junction.

.Ideal

for printed circuit board.

.Reliable

low cost construction utilizing

molded plastic technique.

.High

surge current capability.

.High

temperature soldering guaranteed:

260℃/10 seconds at terminals.

.205(5.2)

.189(4.8)

TMBF

.011(.28)

.006(.17)

.352(9.0)

.331(8.4)

.315(8.0)

.299(7.6)

.024(.60)

.008(.20)

MECHANICAL DATA

.Case

Material: “Green” Molding compound,

.012(.30)

UL flammability classification rating 94V-0,

.008(.20)

“Halogen free”

.064(1.4)

Max .059(1.50)

.Moisture

sensitivity level:level 2a,per J-STD-020

.032(0.8)

.Polarity:Polarity

as marked on the body

Dimensions in inches and (millimeters)

.Weight:

0.204g (approximately)

Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%

MAXIMUM RATINGS

=25℃ unless otherwise noted)

.044(1.15)

.035(.95)

.276(7.0)

.244(6.2)

Parameter

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Average Forward Rectified Current at T

≤90°C

Non-repetitive forward surge current,8.3mS half sine-wave

t Rating for Fusing(t﹤8.3ms)

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Operation Junction Temperature and

Storage Temperature

Symbol

TMBFR310

1000

700

1000

33.6

500

-55 to + 150

Units

Sec

°C

RRM

RMS

F(AV)

FSM

STG

Symbol

Min

-----

ELECTRICAL CHARACTERISTICS

=25℃ unless otherwise noted)

Parameter

Instantaneous

Forward

voltage at 3A

reverse current

at rated DC blocking voltage

Parameter

Typical Thermal Resistance (Note 3)

=25°C

=125°C

=25°C

Typ

1.1

0.94

------

Max

1.3

------

5.0

100.0

Units

------

=125°C

THERMAL CHARACTERISTICS

=25℃ unless otherwise noted)

Symbol

TMBFR310

115

Units

°C /W

(JA)

(JC)

Note:

1.C

onditions:

=0.5A, I

=1.0A, I

=0.25A

2.T

=25℃,V

= 4V

@1Mhz

3.Measured on P.C.Board with15.0mm*15.0mm*1.6mm Copper Pad Areas

-1-

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