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LTC1155M

Description
Dual High Side Micropower MOSFET Driver
File Size263KB,16 Pages
ManufacturerLinear ( ADI )
Websitehttp://www.analog.com/cn/index.html
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LTC1155M Overview

Dual High Side Micropower MOSFET Driver

LTC1155
Dual High Side
Micropower MOSFET Driver
FEATURES
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DESCRIPTIO
Fully Enhances N-Channel Power MOSFETs
8µA Standby Current
85µA ON Current
Short-Circuit Protection
Wide Power Supply Range: 4.5V to 18V
Controlled Switching ON and OFF Times
No External Charge Pump Components
Replaces P-Channel High Side MOSFETs
Compatible with Standard Logic Families
Available in 8-Pin SO Package
The LTC
®
1155 dual high side gate driver allows using low
cost N-channel FETs for high side switching applications.
An internal charge pump boosts the gate above the posi-
tive rail, fully enhancing an N-channel MOSFET with no
external components. Micropower operation, with 8µA
standby current and 85µA operating current, allows use in
virtually all systems with maximum efficiency.
Included on-chip is overcurrent sensing to provide auto-
matic shutdown in case of short circuits. A time delay can
be added in series with the current sense to prevent false
triggering on high in-rush loads such as capacitors and
incandescent lamps.
The LTC1155 operates off of a 4.5V to 18V supply input
and safely drives the gates of virtually all FETs. The
LTC1155 is well suited for low voltage (battery-powered)
applications, particularly where micropower “sleep” op-
eration is required.
The LTC1155 is available in both 8-pin PDIP and 8-pin SO
packages.
, LTC and LT are registered trademarks of Linear Technology Corporation.
APPLICATI
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Laptop Power Bus Switching
SCSI Termination Power Switching
Cellular Phone Power Management
P-Channel Switch Replacement
Relay and Solenoid Drivers
Low Frequency Half H-Bridge
Motor Speed and Torque Control
TYPICAL APPLICATI
Laptop Computer Power Bus Switch with Short Circuit Protection
V
S
= 4.5V TO 5.5V
R
SEN
0.02Ω
R
DLY
100k
C
DLY
0.1µF
+
10µF
C
DLY
0.1µF
R
DLY
100k
R
SEN
0.02Ω
DS1
*IRLR034
5A
MAX
TTL, CMOS INPUT
POWER BUS
V
S
DS2
*IRLR034
5A
MAX
TTL, CMOS INPUT
VOLTAGE DROP (V)
G1
LTC1155
G2
IN1
GND
IN2
µP
SYSTEM
GND
DISK
DRIVE
DISPLAY
PRINTER,
ETC.
*SURFACE MOUNT
1155 TA01
U
Switch Voltage Drop
0.25
0.20
0.15
0.10
0.05
0.00
0
1
2
OUTPUT CURRENT (A)
3
1155 TA02
UO
UO
1

LTC1155M Related Products

LTC1155M LTC1155MJ8 LTC1155IS8 LTC1155IN8 LTC1155I LTC1155CS8 LTC1155CN8 LTC1155CJ8 LTC1155 LTC1155C
Description Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver Dual High Side Micropower MOSFET Driver
Is it Rohs certified? - incompatible incompatible incompatible - incompatible incompatible incompatible - -
Maker - Linear ( ADI ) Linear ( ADI ) Linear ( ADI ) - Linear ( ADI ) Linear ( ADI ) Linear ( ADI ) - -
Parts packaging code - DIP SOIC DIP - SOIC DIP DIP - -
package instruction - DIP, DIP8,.3 SOP, SOP8,.25 DIP, DIP8,.3 - SOP, SOP8,.25 DIP, DIP8,.3 DIP, DIP8,.3 - -
Contacts - 8 8 8 - 8 8 8 - -
Reach Compliance Code - unknow _compli _compli - _compli _compli unknow - -
ECCN code - EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99 - -
high side driver - YES YES YES - YES YES YES - -
Interface integrated circuit type - BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER - BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER - -
JESD-30 code - R-GDIP-T8 R-PDSO-G8 R-PDIP-T8 - R-PDSO-G8 R-PDIP-T8 R-GDIP-T8 - -
JESD-609 code - e0 e0 e0 - e0 e0 e0 - -
Number of functions - 2 2 2 - 2 2 2 - -
Number of terminals - 8 8 8 - 8 8 8 - -
Maximum operating temperature - 125 °C 85 °C 85 °C - 70 °C 70 °C 70 °C - -
Package body material - CERAMIC, GLASS-SEALED PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC, GLASS-SEALED - -
encapsulated code - DIP SOP DIP - SOP DIP DIP - -
Encapsulate equivalent code - DIP8,.3 SOP8,.25 DIP8,.3 - SOP8,.25 DIP8,.3 DIP8,.3 - -
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR - -
Package form - IN-LINE SMALL OUTLINE IN-LINE - SMALL OUTLINE IN-LINE IN-LINE - -
Peak Reflow Temperature (Celsius) - NOT SPECIFIED 235 NOT SPECIFIED - 235 NOT SPECIFIED NOT SPECIFIED - -
power supply - 4.5/18 V 4.5/18 V 4.5/18 V - 4.5/18 V 4.5/18 V 4.5/18 V - -
Certification status - Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified - -
Maximum seat height - 5.08 mm 1.75 mm 3.937 mm - 1.75 mm 3.937 mm 5.08 mm - -
Maximum supply voltage - 18 V 18 V 18 V - 18 V 18 V 18 V - -
Minimum supply voltage - 4.5 V 4.5 V 4.5 V - 4.5 V 4.5 V 4.5 V - -
Nominal supply voltage - 5 V 5 V 5 V - 5 V 5 V 5 V - -
surface mount - NO YES NO - YES NO NO - -
technology - CMOS CMOS CMOS - CMOS CMOS CMOS - -
Temperature level - MILITARY INDUSTRIAL INDUSTRIAL - COMMERCIAL COMMERCIAL COMMERCIAL - -
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - -
Terminal form - THROUGH-HOLE GULL WING THROUGH-HOLE - GULL WING THROUGH-HOLE THROUGH-HOLE - -
Terminal pitch - 2.54 mm 1.27 mm 2.54 mm - 1.27 mm 2.54 mm 2.54 mm - -
Terminal location - DUAL DUAL DUAL - DUAL DUAL DUAL - -
Maximum time at peak reflow temperature - NOT SPECIFIED 20 NOT SPECIFIED - 20 NOT SPECIFIED NOT SPECIFIED - -
Disconnect time - 60 µs 60 µs 60 µs - 60 µs 60 µs 60 µs - -
connection time - 1000 µs 2000 µs 2000 µs - 1000 µs 1000 µs 1000 µs - -
width - 7.62 mm 3.9 mm 7.62 mm - 3.9 mm 7.62 mm 7.62 mm - -

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