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SBT40100VFCT_T0_10001

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SBT40100VFCT_T0_10001 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN

SBT40100VFCT_T0_10001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.76 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current250 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage100 V
Maximum reverse current120 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

SBT40100VFCT_T0_10001 Preview

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SBT40100VFCT
ULTRA LOW VF SCHOTTKY RECTIFIER
VOLTAGE
FEATURES
• Ultra low forward voltage drop, low power loss
• High efficiency operation
• Lead free in compliance with EU RoHS 2011/65/EU directive
100 Volt
CURRENT
40 Ampere
0.100(2.55)
0.112(2.85)
0.272(6.9)
0.248(6.3)
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
0.606(15.4)
0.583(14.8)
0.128(3.25)
0.543(13.8)
MECHANICAL DATA
Case : ITO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight : 0.056 ounces, 1.6 grams.
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.177(4.5)
0.137(3.5)
0.512(13.0)
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified current
Peak forward surge current : 8.3ms single half sine-wave
superimposed on rated load
Typical thermal resistance
Operating junction temperature range
Storage temperature range
(Note 1)
per device
per diode
SYMBOL
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
R
JC
T
J
T
STG
VALUE
100
70
100
40
20
250
5.5
-55 to + 150
-55 to + 150
MIN.
UNIT
V
V
V
A
A
O
C /W
o
C
C
o
Note : 1. Device mounted on a infinite heatsink , then measured the center of the marking side.
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
Breakdown voltage per diode
SYMBOL
V
BR
TEST CONDITIONS
I
R
=0.5mA
I
F
=5A
I
F
=10A
I
F
=20A
I
F
=5A
I
F
=10A
V
R
=70V
Reverse current per diode
I
R
V
R
=100V
T
J
=25
o
C
T
J
=125
o
C
T
J
=25
o
C
T
J
=125
o
C
MIN.
100
-
-
-
-
-
-
-
-
TYP.
-
0.48
0.57
0.71
0.41
0.53
5
-
12
MAX.
-
-
-
0.76
-
-
-
120
-
UNIT
V
V
V
A
A
mA
Instantaneous forward voltage per diode
V
F
May 13,2014-REV.00
PAGE . 1
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