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MD800A08D6

Description
Rectifier Diode Modules
File Size112KB,3 Pages
ManufacturerAPTSEMI
Jiangsu APT Semiconductor Co., Ltd. is a high-tech enterprise invested and controlled by Yangzhou Yangjie Electronic Technology Co., Ltd., which specializes in the design, manufacture and sale of new power electronic modules and semiconductor intelligent devices with independent intellectual property rights. Products include: IGBT, MOSFET, FRED, thyristor, rectifier and other power modules and their semiconductor devices. It has an annual production capacity of 3 million power modules of various types and is currently one of the domestic power electronic power module production bases. The company's products can be widely used in different fields with a power range of 0.5KW~1MW, including inverters, welding machines, induction heating, uninterruptible power supplies, variable frequency air conditioners, electric vehicles, locomotive traction, solar energy, wind power generation, charging devices, smart grids, household appliances, medical equipment, etc.
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Rectifier Diode Modules

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MD800C18D6
Applications
Rectifier
Non-controllable rectifiers for AC/AC
converters
V
RRM
800 to 1800V
Line rectifiers for transistorized AC motor
I
FAV
800 A
controllers
Field supply for DC motors
Diode Modules
Applications
Non-controllable rectifiers for AC/AC
converters
Line rectifiers for transistorized AC motor
controllers
Field supply for DC motors
Circuit
Features
Blocking voltage: 800 to 1800V
Heat transfer through aluminum oxide ceramic
isolated metal baseplate
Module Type
TYPE
MD800C08D6
MD800C12D6
MD800C16D6
MD800C18D6
MD800A08D6
MD800A12D6
MD800A16D6
MD800A18D6
MD800K08D6
MD800K12D6
MD800K16D6
MD800K18D6
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
Conditions
Single phase ,half wave 180°conduction Tc=85℃
I
FAV
t=10mS Tvj =45℃
I
FSM
2
t=10mS Tvj =45℃
it
a.c.50HZ;r.m.s.;1min
V
isol
T
vj
T
stg
Mt
Ms
Weight
To terminals(M12)
To heatsink(M8)
Values
800
30000
4500000
3000
-40 to 150
-40 to 125
9±15%
5±15%
3500
Units
A
A
A
2
s
V
Nm
Nm
g
Module (Approximately)
Thermal Characteristics
Symbol
Per diode
R
th(j-c)
Module
R
th(c-s)
Electrical Characteristics
Symbol
V
FM
I
RD
Conditions
Values
0.03
0.01
Units
℃/W
℃/W
Conditions
T=25℃ I
F
=2400A
T
vj
=TvjM V
RD
=V
RRM
Values
Min.
Typ.
Max.
1.8
35
Units
V
mA
Document Number: S-M0015
Rev.1.0, May.31, 2013
www.apt-semi.com
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