RB521S-30 datasheet, PDF - EEWORLD Datasheet

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RB521S-30: Descriptionschottky,200mA 30V VF<0.5V Ir<30uA SOD-523; CategoryDiscrete semiconductor Schottky diode; File Size606KB，2 Pages; ManufacturerBORN SEMICONDUCTOR（SHENZHEN）CO.,LTD.; Websitehttp://www.born-tw.com/; BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.

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schottky,200mA 30V VF<0.5V Ir<30uA SOD-523

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RB521S-30

SCHOTTKY

SOD523 Plastic-Encapsulate Schottky Barrier Diode

RHOS

SOD-523

Features



Low Forward Voltage Drop

Flat Lead SOD-523 Small Outline Plastic Package

Extremely Small SOD-523 Package

Surface Device Type Mounting

RoHS Compliant

Green EMC

Matte Tin(Sn) Lead Finish

Band Indicates Cathode

Marking:

Maximum Ratings & Thermal Characteristics

(

Ratings at 25℃ ambient temperature unless otherwise specified.)

Symbol

STG

F(AV)

FSM

Parameter

Power Dissipation

Storage Temperature Range

Operating Junction Temperature

Reverse Voltage

Average Forward Current

Peak Forward Surge Current (At 8.3ms single half sine-wave)

Value

200

-55 to +125

+125

200

Units

°C

These ratings are limiting values above which the serviceability of the diode may be impaired.

Electrical Characteristics

(

Ratings at 25℃

Symbol

Breakdown Voltage

Reverse Leakage Current

Forward Voltage

TCBAT42WS,

ambient temperature unless otherwise specified).

Parameter

Test Condition

=500µA

=10V

=200mA

0.5

Limits

Min

Max

Volts

µA

Volts

Unit

Rev 8: Nov 2014

www.born-tw.com

Page 1 of 2

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