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BZT52C10

Description
Maximum power: 500mW Accuracy: - Reverse leakage current: 0.2uA @ 7V Voltage regulation value (typical value): 10V zener, 9.4-10.6V, Izt=5mA, SOD-123
CategoryDiscrete semiconductor    Zener diode   
File Size669KB,5 Pages
ManufacturerBORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.
Websitehttp://www.born-tw.com/
BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.
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BZT52C10 Overview

Maximum power: 500mW Accuracy: - Reverse leakage current: 0.2uA @ 7V Voltage regulation value (typical value): 10V zener, 9.4-10.6V, Izt=5mA, SOD-123

BZT52C10 Parametric

Parameter NameAttribute value
Maximum power500mW
Accuracy-
Reverse leakage current0.2uA @ 7V
Stable voltage value (typical value)10V

BZT52C10 Preview

Download Datasheet
BZT52Cxx Series
ZENER
SOD-123
SOD123 Plastic-Encapsulate Zener Diode
ROHS
Features
Low Zener Impedance
Power Dissipation of 500mW
High Stability and High Reliability
Mechanical Data
SOD-123 Small Outline Plastic Package
Polarity: Color band denotes cathode end
Epoxy UL: 94V-0
Mounting Position: Any
Maximum Ratings & Thermal Characteristics
(
Ratings at 25℃ ambient temperature unless otherwise specified.)
Parameters
Power Dissipation
Forward Voltage @IF=10mA
Storage temperature range
1)
2)
3)
Symbol
Pd
Vf
Ts
Value
500
0.9
1)
2)
Unit
mW
V
-65-+150
Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm²
Short duration test pulse used to minimize self-heating effect
f=1KHz
Electrical Characteristics
(
.
Ratings at 25℃ ambient temperature unless otherwise specified).
Zener Voltage Range
Device
Marking
Nom(V)
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
WX
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
Vz@Izt
Min(V)
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
Maximum Zener
Impedance
1.5KExxA(CA)
Zzk
Zzt
Izt
Izk
@Izt
@Izk
Ω
Max(V)
mA
mA
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Reverse Current
IR
uA
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
VR
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
Typical
Temperature
coefficent @
IZTC=mV/℃
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
Test
Current
IZTC
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Rev 8: Nov 2014
www.born-tw.com
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