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Datasheet > Manufacturers> BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.

BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.

BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.

Part Number Manufacturer Description Datasheet
PESD5V0U1BL-N BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Reverse shutdown voltage (typ): 5V Breakdown voltage (min): 5.5V Polar ... Download
PESD12VS1UB-N BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 10A (8/20us) ... Download
ESD5Z5.0T1G BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 15A (8/20us) ... Download
BZT52C33 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Accuracy: - Voltage regulation value (typical value): 33V Reverse leak ... Download
SMCJ58CA BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 16.1A Clamping ... Download
BZT52C6V2S BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Accuracy: - Voltage regulation value (typical value): 6.2V Reverse lea ... Download
SMDJ26A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Reverse shutdown voltage (typ): 26V Breakdown voltage (minimum): 28.9V ... Download
SLVU2.8-4N BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 16A (8/20us) C ... Download
SMAJ12A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 20.1A Clampin ... Download
5.0SMDJ30A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 103A Clamping ... Download
SMBJ43CA BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 8.7A Clamping ... Download
SMBJ8.5CA BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 41.7A Clamping ... Download
SMAJ22A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 11.3A Clampin ... Download
BZT52C33S BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Accuracy: - Voltage regulation value (typical value): 33V Reverse leak ... Download
BZT52C15S BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Accuracy: - Voltage regulation value (typical value): 15V Reverse leak ... Download
BST23A122V BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 12A (8/20us) ... Download
SMBJ36A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 10.4A Clampin ... Download
BAV21WS BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Reverse recovery time (trr): 50ns DC reverse withstand voltage (Vr): 2 ... Download
BZT52C5V1 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Accuracy: - Voltage regulation value (typical value): 5.1V Reverse lea ... Download
SMBJ6.5CA BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 53.6A Clamping ... Download
PESD12VS2UT-N BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional / Unidirectional Peak pulse current (10/1000us ... Download
MMBT2907A BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Rated power: 250mW Collector current Ic: 600mA Collector-emitter break ... Download
P6KE6.8CA BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 57.2A Clamping ... Download
GBLC12C-N BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 10A (8/20us) C ... Download
SMFJ12CA BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 10.1A Clamping ... Download
BSD5A121V35 BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 12A Clamping ... Download
GBLC24C-N BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 4A (8/20us) Cl ... Download
SMBJ13CA BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Bidirectional Peak pulse current (10/1000us): 27.9A Clamping ... Download
BZT52C4V3S BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Accuracy: - Voltage regulation value (typical value): 4.3V Reverse lea ... Download
BST143A053U BORN SEMICONDUCTOR(SHENZHEN)CO.,LTD. Polarity: Unidirectional Peak pulse current (10/1000us): 12A (8/20us) ... Download

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