S9018 datasheet, PDF - EEWORLD Datasheet

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S9018: Descriptionransistors,PNP 30V 50mA 200mW HFE=100～200 fT=850MHz,SOT-23; CategoryDiscrete semiconductor triode; File Size2MB，2 Pages; ManufacturerBORN SEMICONDUCTOR（SHENZHEN）CO.,LTD.; Websitehttp://www.born-tw.com/; BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.

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ransistors,PNP 30V 50mA 200mW HFE=100～200 fT=850MHz,SOT-23

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S9018

Transistors

SOT-23

SOT-23 Plastic-Encapsulate Transistors(NPN)

RHOS

Features



AM/FM Amplifier, Local Oscillator of FM/VHF Tuner



High Current Gain Bandwidth Product f

=1.1 GHz (Typ)

MARKING：J8

1. BASE

2. EMITTER

3. COLLECTOR

Maximum Ratings

(

Ratings at 25℃ ambient temperature unless otherwise specified.)

Symbol

CBO

CEO

EBO

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

200

150

-55-150

Units

℃

Electrical Characteristics

(

Ratings at 25℃

ambient temperature unless otherwise specified).

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

CEO

EBO

FE(1)

CE(sat)

BE(sat)

Test

conditions

Min

Typ

Max

Unit

= 100

A, I

= 1mA, I

=100

A, I

=12V, I

= 3V, I

=5V, I

= 1mA

=10mA, I

= 1mA

=10mA, I

= 1mA

=5V, I

= 5mA

0.05

0.1

200

0.5

1.4

850

MHz

400MHz

CLASSIFICATION OF h

Rank

Range

70-100

100-200

Rev 8: Nov 2014

www.born-tw.com

Page 1 of 2

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