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BM3407A

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 4.1A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 65mΩ @ 4.1A, 10V Maximum power dissipation (Ta=25°C): 1.4W Type: P-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size2MB,3 Pages
ManufacturerBORN SEMICONDUCTOR(SHENZHEN)CO.,LTD.
Websitehttp://www.born-tw.com/
BORNSEMI (Shenzhen) Co., Ltd. (BORNSEMI) is a semiconductor company with independent R&D, design, production and sales as its main body. It is a high-tech enterprise specializing in wafer design, R&D, production and sales of protection devices and power devices. It is one of the international suppliers that master the core technology of semiconductor overvoltage protection devices and protection integrated circuits. BORN focuses on the development and sales of high-quality, high-performance analog integrated circuits and power devices, and always plans, develops and produces with the goal of world-class electronic technology. The company's products include: protection devices (TVS, ESD, TSS) power devices (MOS, SKY, DIODE, TRANSISTOR), driver ICs, interface chips, etc. BORN has a production base in Tianjin (a joint venture with the Institute of Microelectronics of the Chinese Academy of Sciences) and a production base in Henan (wafer manufacturing and packaging and testing). From wafer design, tape-out to packaging and testing, BORN strives for high reliability of product quality and creates a closed loop of the entire industry chain. In order to form two major system products, power and protection, the quality has reached the international advanced level, especially our company's low-capacitance series of semiconductor protection devices, which have independent intellectual property rights and patent systems. As an industry leader in the field of overcurrent and overvoltage devices, our products are an indispensable component of almost all products that use electrical energy, including: automotive electronic systems, traffic signals, equipment communication terminals, communication equipment, household and industrial electrical appliances, electricity, power supply equipment, and electronic circuit protection at the power input end.
Download Datasheet Parametric View All

BM3407A Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 4.1A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 65mΩ @ 4.1A, 10V Maximum power dissipation (Ta=25°C): 1.4W Type: P-channel

BM3407A Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C4.1A
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance65mΩ @ 4.1A,10V
Maximum power dissipation (Ta=25°C)1.4W
typeP channel

BM3407A Preview

Download Datasheet
BM3407A
MOSFET
SOT-23
-
P-Channel Enhancement-Mode MOSFET
ROHS
Features
Advanced trench process technology
High Density Cell Design For
Ultra Low On-Resistance
MAXIMUM RANTINGS
Characteristic
Drain-Source V oltage
Gate- Source V oltage
Drain Current (continuous)
Drain Current (pulsed)
Total Device Dissipation
T
A
=
25℃
Junction
Storage Temperature
Symbol
BV
DSS
V
GS
I
D
I
DM
P
D
T
J
T
stg
Max
-30
+20
-4.1
-16
1400
150
-55to+150
Unit
V
V
A
A
mW
Electrical Characteristics
Characteristic
Drain-Source Breakdown V oltage
(I
D
= -250uA,V
GS
=0V)
Gate Threshold V oltage
(I
D
= -250uA,V
GS
= V
DS
)
Diode Forward V oltageDrop
(I
S
= -1 A,V
GS
=0V)
Zero Gate V oltageDrain Current
(V
GS
=0V, V
DS
= -24V)
(V
GS
=0V, V
DS
= -24V , T
A
=
25℃)
Gate Body Leakage (V
GS
=+20V, V
DS
=0V)
Static Drain-Source On-State Resistance
(I
D
= -4.1A,V
GS
= -10V )
Static Drain-Source On-State Resistance
(I
D
= -2A,V
GS
= -4.5V)
Input Capacitance
(V
GS
=0V, V
DS
= -15V,f=1MHz)
Output Capacitance
(V
GS
=0V, V
DS
= -15V,f=1MHz)
Turn-ON Time
(V
DS
= -15V, I
D
= -10 A, R
GEN
=6
Ω
)
Turn-OFF Time
(V
DS
= -15V, I
D
= -10 A, R
GEN
=6
Ω
)
Rev 8: Nov 2014
Symbol
BV
DSS
V
GS(th)
V
SD
I
DSS
I
GSS
R
DS(ON)
R
DS(ON)
C
ISS
C
OSS
t
(on)
t
(off)
www.born-tw.com
Min
-30
-1
Typ
55
75
260
37
6
20
Max
-2.5
-1
-1
-5
+100
65
95
Unit
V
V
V
u
A
n
A
pF
pF
ns
ns
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