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SCS308AMC

Description
Diode Silicon Carbide Schottky 650 V 8A (DC) Through Hole TO-220FM
CategoryDiscrete semiconductor    diode   
File Size960KB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

SCS308AMC Overview

Shorter recovery time reduces temperature dependence High speed switching High surge current capability

SCS308AMC Parametric

Parameter NameAttribute value
categoryDiscrete semiconductor;diode
MakerROHM Semiconductor
series-
PackagePipe fittings
technologySiC(Silicon Carbide)Schottky
Voltage - DC reverse (Vr) (maximum)650 V
Current - average rectification (Io)8A
Voltage at different If - Forward (Vf)1.5 V @ 8 A
speedNo recovery time > 500mA (Io)
Reverse recovery time (trr)0 ns
Current at different Vr - reverse leakage40 µA @ 650 V
Capacitance at different Vr, F400pF @ 1V,1MHz
Installation typeThrough hole
Package/casingTO-220-2 whole package
Supplier device packagingTO-220FM
Operating Temperature - Junction175°C (max)
Basic product numberSCS308

SCS308AMC Preview

Download Datasheet
SCS308AM
SiC Schottky Barrier Diode
Outline
Datasheet
V
R
I
F
Q
C
Features
1) Shorter recovery time
650V
8A
21nC
TO-220FM
Inner
circuit
2) Reduced temperature dependence
3) High-speed switching possible
4) High surge current capability
(1) Cathode
(2) Anode
Packaging
specifications
Packaging
Applications
・PFC
Boost Topology
・Secondary
Side Rectification
・Data
Center
・PV
Power Conditioners
Absolute
maximum ratings
(T
j
= 25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge non-
repetitive forward
current
(T
c
= 105°C)
Symbol
V
RM
V
R
I
F
Value
650
650
8
67
I
FSM
57
250
I
FRM
27 *
1
22
16
33 *
2
175
55
to
175
Unit
V
V
A
A
A
A
A
A
2
s
2
As
Tube
-
-
50
C
SCS308AM
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Packing code
Marking
PW=10ms sinusoidal, T
j
=25°C
PW=10ms sinusoidal, T
j
=150°C
PW=10s square, T
j
=25°C
Repetitive peak forward current
i t value
2
1≦PW≦10ms, T
j
=25°C
1≦PW≦10ms, T
j
=150°C
i dt
2
Total power disspation
Junction temperature
Range of storage temperature
*1 T
c
=100°C, T
j
=150°C, Duty cycle=10% *2 T
c
=25°C
P
D
T
j
T
stg
W
°C
°C
www.rohm.com
©2018 ROHM Co., Ltd. All rights reserved
1/5
TSQ50230-SCS308AM
15.May.2018 - Rev.001

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