SCS308AM
SiC Schottky Barrier Diode
Outline
Datasheet
V
R
I
F
Q
C
Features
1) Shorter recovery time
650V
8A
21nC
TO-220FM
Inner
circuit
2) Reduced temperature dependence
3) High-speed switching possible
4) High surge current capability
(1) Cathode
(2) Anode
Packaging
specifications
Packaging
Applications
・PFC
Boost Topology
・Secondary
Side Rectification
・Data
Center
・PV
Power Conditioners
Absolute
maximum ratings
(T
j
= 25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge non-
repetitive forward
current
(T
c
= 105°C)
Symbol
V
RM
V
R
I
F
Value
650
650
8
67
I
FSM
57
250
I
FRM
27 *
1
22
16
33 *
2
175
55
to
175
Unit
V
V
A
A
A
A
A
A
2
s
2
As
Tube
-
-
50
C
SCS308AM
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Packing code
Marking
PW=10ms sinusoidal, T
j
=25°C
PW=10ms sinusoidal, T
j
=150°C
PW=10s square, T
j
=25°C
Repetitive peak forward current
i t value
2
1≦PW≦10ms, T
j
=25°C
1≦PW≦10ms, T
j
=150°C
∫
i dt
2
Total power disspation
Junction temperature
Range of storage temperature
*1 T
c
=100°C, T
j
=150°C, Duty cycle=10% *2 T
c
=25°C
P
D
T
j
T
stg
W
°C
°C
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TSQ50230-SCS308AM
15.May.2018 - Rev.001
SCS308AM
Electrical
characteristics
(T
j
= 25°C)
Values
Parameter
DC blocking voltage
Symbol
V
DC
Conditions
Min.
I
R
=40A
I
F
=8A,T
j
=25°C
Forward voltage
V
F
I
F
=8A,T
j
=150°C
I
F
=10A,T
j
=175°C
V
R
=650V,T
j
=25°C
Reverse current
I
R
V
R
=650V,T
j
=150°C
V
R
=650V,T
j
=175°C
V
R
=1V,f=1MHz
Total capacitance
Total capacitive charge
Switching time
Non-repetetive
Avaranche Energy
Thermal
characteristics
Values
Parameter
Thermal resistance
Symbol
R
th(j-c)
Conditions
Min.
-
-
Typ.
3.9
Max.
4.5
C
V
R
=650V,f=1MHz
Q
C
t
C
E
ava
V
R
=400V,di/dt=350A/s
V
R
=400V,di/dt=350A/s
Datasheet
Unit
Typ.
-
1.35
1.44
1.50
0.024
1.6
4.8
400
36
21
15
110
Max.
-
1.50
1.71
-
40
160
-
-
-
-
-
-
V
V
V
V
A
A
A
pF
pF
nC
ns
mJ
650
-
-
-
-
-
-
-
-
-
-
-
L=1mH
Unit
°C/W
Typical
Transient Thermal Characteristics
Symbol
R
th1
R
th2
R
th3
Value
2.15E-01
1.40E+00
2.28E+00
K/W
Unit
Symbol
C
th1
C
th2
C
th3
Value
2.62E-04
2.27E-03
3.28E-01
Ws/K
Unit
T
j
R
th1
R
th,n
T
c
PD
C
th1
C
th2
C
th,n
T
a
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TSQ50230-SCS308AM
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SCS308AM
Electrical
characteristic curves
Datasheet
Fig.1 V
F
- I
F
Characteristics
100
Pulsed
10
Fig.2 V
F
- I
F
Characteristics
14
12
Pulsed
T
a
=
25ºC
T
a
=25ºC
Forward Current : I
F
[A]
Forward Current : I
F
[A]
10
8
6
4
T
a
=75ºC
T
a
=125ºC
T
a
=175ºC
1
T
a
=
25ºC
T
a
=25ºC
0.01
T
a
=75ºC
T
a
=125ºC
T
a
=175ºC
0.001
0.0
0.5
1.0
1.5
2.0
2.5
0.1
2
0
0.0
0.5
1.0
1.5
2.0
2.5
Forward Voltage : V
F
[V]
Forward Voltage : V
F
[V]
Fig.3 V
R
- I
R
Characteristics
10
T
a
=175ºC
Fig.4 V
R
-C
t
Characteristics
1,000
Reverse Current : I
R
[A]
1
T
a
=125ºC
T
a
=75ºC
Capacitance Between Terminals : C
t
[pF]
100
0.1
T
a
=25ºC
T
a
=
25ºC
0.01
10
T
a
=25ºC
f=1MHz
1
0.01
0.1
1
10
100
1000
0.001
0
200
400
600
Reverse Voltage : V
R
[V]
Reverse Voltage : V
R
[V]
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TSQ50230-SCS308AM
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SCS308AM
Electrical
characteristic curves
Datasheet
Transient Thermal Resistance : R
th(j-c)
[ºC/W]
Fig.5 Typical Transient Thermal Resistance
vs. Pulse Width
10
T
a
=25ºC
Single Pulse
Fig.6 Power Dissipation
35
30
1
Power Dissipation [W]
25
20
15
10
5
0.1
0.01
1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+0 1.E+1
0
25
50
75
100
125
150
175
Pulse Width : PW [s]
Case Temperature : T
c
[ºC]
Fig.7*
3
Maximum peak forward current
derating curve I
P
- T
c
70
60
Fig.8*
4
Typical peak forward current
derating curve I
P
- T
c
(Not guaranteed)
70
60
50
Duty=0.2
40
30
20
10
0
Duty=0.5
Duty=0.1
Peak Forward Current : I
P
[A]
50
40
Duty=0.1
Duty=0.2
30
Duty=0.5
20
10
Duty=0.8
0
25
50
D.C.
75
100
125
150
175
Peak Forward Current : I
P
[A]
Duty=0.8
25
50
D.C.
75
100
125
150
175
Case Temperature : T
c
[ºC]
*3 Based on max Vf, max R
th(j-c)
Valid for switching of above 10kHz,
excluding D.C. curve.
Case Temperature : T
c
[
º
C]
*4 Based on typ Vf, typ R
th(j-c)
Typical value, not guaranteed
Valid for switching of above 10kHz,
excluding D.C. curve
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TSQ50230-SCS308AM
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SCS308AM
Electrical
characteristic curves
Datasheet
Fig.9 Surge non-repetitive forward current
vs. Pulse width (Sinusoidal waveform)
Surge non-repetitive forward current : I
FSM
[A]
1000
Fig.10 Typical capacitance store energy
10
Capacitance stored energy : E
C
[J]
1.E-3
1.E-2
9
8
7
6
5
4
3
2
1
0
0
200
400
600
100
T
a
=25ºC
Single Pulse
10
1.E-5
1.E-4
Pulse Width : PW [s]
Reverse Voltage : V
R
[V]
Symplified
forward characteristic model
Fig.11 Equivalent forward current curve
V
F
= V
th
+ R
diff
I
F
V
th
( T
j
) = a
0
+ a
1
T
j
R
diff
( T
j
) = b
0
+ b
1
T
j
+ b
2
T
j2
Symbol
a
0
a
1
Typical Value
9.66E-01
-1.10E-03
4.40E-02
9.33E-05
9.60E-07
Unit
V
V/°C
/°C
/°C
2
Forward Current : I
F
V
th
1/R
diff
b
0
b
1
b
2
Forward Voltage : V
F
T
j
in ºC; -55 ºC < T
j
< 175ºC ; I
F
< 16 A
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TSQ50230-SCS308AM
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