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Datasheet> All Categories > Discrete semiconductor> diode> RBR40NS60AFHTL
RBR40NS60AFHTL PDF
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RBR40NS60AFHTL

Description
Diode Array 1 Pair Common Cathode Schottky 60 V 40A Surface Mount Type TO-263-3, D²Pak (2 Lead + Tab), TO-263AB
CategoryDiscrete semiconductor    diode   
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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RBR40NS60AFHTL Overview

RBR40NS60AFH is a high reliability automotive Schottky barrier diode suitable for general rectification.

RBR40NS60AFHTL Parametric

Parameter NameAttribute value
categoryDiscrete semiconductor;diode
MakerROHM Semiconductor
seriesAutomotive, AEC-Q101
PackageTape and Reel (TR) Cut Tape (CT)
Diode configuration1 pair of common cathodes
technologySchottky
Voltage - DC reverse (Vr) (maximum)60 V
Current - Average rectification (Io) (per diode)40A
Voltage at different If - Forward (Vf)600 mV @ 20 A
speedFast recovery = < 500ns, > 200mA (Io)
Current at different Vr - reverse leakage800 µA @ 60 V
Operating Temperature - Junction150°C (maximum)
Installation typesurface mount type
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB
Supplier device packagingLPDS
Basic product numberRBR40

RBR40NS60AFHTL Preview

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RBR40NS60AFH
Schottky Barrier Diode
(AEC-Q101 qualified)
Data sheet
　 　 　
　
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
●
Outline
V
R
I
o
I
FSM
60
40
100
V
A
A
　
　
　
　
　
　
　
　　　
●
Inner Circuit
●
Features
High reliability
Power mold type
Cathode common dual type
Low V
F
●
Application
Switching power supply
●
Structure
Silicon epitaxial planar
●
Packaging Specifications
Packing
Embossed T
ape
Reel Size(mm)
330
T
aping Width(mm)
24
Quantity(pcs)
1000
T
aping Code
TL
Marking
BR40NS60A
●
Absolute Maximum Ratings (T
c
=25ºC unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
Peak forward surge current
Junction temperature
(1)
Storage temperature
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Conditions
Duty
≦
0.5
Reverse direct voltage
60Hz half sin waveform
，
resistive load
，
I
o
/2 per diode
，
T
c
=85
℃
Max.
60Hz half sin waveform
，
non-repetitive
，
per diode
，
T
a
=25
℃
Limits
60
60
40
100
150
-55
½
150
Unit
V
V
A
A
℃
℃
-
-
Note(1) T avoid occurrence of thermal runaway
，
actual board is to be designed to fulfill dP
d
/dT
j
<1/R
θJA
.
o
Attention
www.rohm.com
© 2018- ROHM Co., Ltd. All rights reserved.
1/6
　
　 　 　 　
　
　 　
　
2019/05/28_Rev.003

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