BSZ010NE2LS5ATMA1 datasheet, PDF

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BSZ010NE2LS5ATMA1: DescriptionSurface mount type N channel 25 V 32A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) PG-TSDSON-8-FL; CategoryDiscrete semiconductor The transistor; File Size1MB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

BSZ010NE2LS5ATMA1 Overview

The Infineon OptiMOS 5 power transistor is an N-channel MOSFET optimized for use in high-performance buck converters. Has excellent heat resistance. Halogen-free test complies with IEC61249-2-21 standard ultra-low on-resistance

BSZ010NE2LS5ATMA1 Parametric

Parameter Name	Attribute value
category	Discrete semiconductor;The transistor
Maker	Infineon
series	OptiMOS™ 5
Package	Tape and Reel (TR) Cut Tape (CT)
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	25 V
Current at 25°C - Continuous Drain (Id)	32A（Ta），40A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	4.5V，10V
On-resistance (maximum value) at different Id and Vgs	1 milliohm @ 20A, 10V
Vgs(th) (maximum value) when different Id	2V @ 250µA
Gate charge (Qg) (maximum value) at different Vgs	29 nC @ 4.5 V
Vgs (maximum value)	±16V
Input capacitance (Ciss) (maximum value) at different Vds	3900 pF @ 12 V
FET function	-
Power dissipation (maximum)	2.1W（Ta），69W（Tc）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount type
Supplier device packaging	PG-TSDSON-8-FL
Package/casing	8-PowerTDFN
Basic product number	BSZ010

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