STPS4S200
Datasheet
4 A - 200 V power Schottky rectifier
Features
•
•
•
•
•
•
Negligible switching losses
High junction temperature capability
Very small conduction losses
Low leakage current
T
j
= -40 °C minimum operating
ECOPACK2
component
Applications
•
•
•
•
•
Inverter
Lighting
Battery charger
Telecom power
Home appliance
Description
Single chip Schottky rectifier suited for switch mode power supplies and high
frequency DC to DC converters.
Packaged in SMB Flat Notch, SMB Flat, SMC and DPAK, the
STPS4S200
is ideal
for surface mounting and used in low voltage, high frequency inverters, free wheeling
and polarity protection applications.
Product status
STPS4S200
Product summary
Symbol
I
F(AV)
V
RRM
T
j(max.)
V
F(typ.)
Value
4A
200 V
175 °C
0.64 V
DS10646
-
Rev 5
-
June 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
STPS4S200
Characteristics
1
Characteristics
Table 1.
Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
Repetitive peak reverse voltage
Forward rms current
Average forward current, δ = 0.5, square
wave
Surge non repetitive forward current
Storage temperature range
Operating junction temperature range
(1)
SMB Flat Notch, SMC, SMB
Flat
DPAK
T
L
= 125 °C
T
c
= 160°C
t
p
= 10 ms sinusoidal
130
-65 to +175
-40 to +175
A
°C
°C
Value
200
10
Unit
V
A
4
A
1. (dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2.
Thermal resistance parameter
Symbol
R
th(j-l)
R
th(j-c)
Parameter
Junction to lead (SMB Flat Notch, SMC, SMB Flat)
Junction to case
DPAK
Max. value
15
3.2
Unit
°C/W
For more information, please refer to the following application note :
•
AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3.
Static electrical characteristics
Symbol
I
R
(1)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
R
= V
RRM
Min.
-
-
-
-
0.64
0.70
Typ.
Max.
5
2.50
0.87
0.71
Unit
µA
mA
V
V
F
(2)
Forward voltage drop
I
F
= 4 A
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.63 x I
F(AV)
+ 0.020 x I
F2(RMS)
For more information, please refer to the following application notes related to the power losses :
•
AN604: Calculation of conduction losses in a power rectifier
•
AN4021: Calculation of reverse losses on a power diode
DS10646
-
Rev 5
page 2/16
STPS4S200
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1.
Average forward power dissipation versus
average forward current
3.5
3.0
2.5
2.0
1.5
1.0
0.5
δ= tp/T
tp
T
Figure 2.
Average forward current versus ambient
temperature (δ = 0.5)
10
8
6
4
2
T
SMB-Flat & SMC
R
th(j-a)
=R
th(j-l)
P
F
(AV)
(W)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ=1
I
F(AV)
(A)
DPAK
R
th(j-a)
=R
th(j-c)
I
0.0
0.0
F
(AV)
(A)
δ
=tp/T
tp
T
amb
(°C)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0
25
50
75
100
125
150
175
Figure 3.
Relative variation of thermal impedance junction
Figure 4.
Relative variation of thermal impedance junction
to case versus pulse duration (DPAK)
to lead versus pulse duration (SMB flat, SMB flat Notch)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
Single pulse
tP(s)
Z
th(j-c)
/R
th(j-c)
DPAK
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.E+00
Z
th(j-l)
/R
th(j-l)
SMB Flat
SMB Flat Notch
Single pulse
0.0
1.E-04
t (s)
P
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Figure 5.
Relative variation of thermal impedance junction
to lead versus pulse duration (SMC)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Single pulse
t
p
(s)
Figure 6.
Reverse leakage current versus reverse voltage
applied (typical values)
1.E+04
R
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
Z
th(j-l)
/R
th(j-l)
SMC
I
(µA)
T = 150 °C
j
T = 125 °C
j
T = 100 °C
j
T = 75 °C
j
T = 50 °C
j
T = 25 °C
j
V (V)
R
1.E+02
0
20
40
60
80
100 120
140
160
180
200
DS10646
-
Rev 5
page 3/16
STPS4S200
Characteristics (curves)
Figure 7.
Junction capacitance versus reverse voltage
applied (typical values)
1000
Figure 8.
Forward voltage drop versus forward current
(typical values)
I
(A)
10.00
F
C(pF)
F = 1 MHz
V
OSC
= 30 mV
RMS
T = 25 °C
j
T = 125 °C
j
1.00
T = 25 °C
j
100
0.10
10
1
10
VR(V)
100
1000
0.01
0.0
V (V)
F
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Figure 9.
Forward voltage drop versus forward current
(maximum values)
10.00
Figure 10.
Thermal resistance junction to ambient versus
copper surface under tab (DPAK)
R
th(j-a)
(°C/W)
Epoxy printed circuit board, copper thickness: 35 µm
DPAK
I
F(A)
100
90
T = 125 °C
j
80
70
60
50
1.00
0.10
T = 25 °C
j
40
30
20
0.01
0.0
V (V)
F
10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0
5
10
15
20
25
30
S
Cu
(cm²)
35
40
Figure 11.
Thermal resistance junction to ambient versus
copper surface under each lead (SMB Flat, SMB Flat
Notch)
200
Figure 12.
Thermal resistance junction to ambient versus
copper surface under each lead (SMC)
160
R
th(j-a)
(°C/W)
R
th(j-a)
(°C/W)
Epoxy printed board FR4, copper thickness: 35 μm
SMB flat
SMB flat Notch
Epoxy p ri nted ci rcui t board FR4, coppe r t hi ckness: 35 µm
140
120
100
SMC
150
100
80
60
40
20
50
S
Cu
(cm²)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S
Cu
(cm²)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
DS10646
-
Rev 5
page 4/16
STPS4S200
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at:
www.st.com.
ECOPACK is an ST trademark.
DS10646
-
Rev 5
page 5/16
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