MSC010SDA070K
Zero Recovery Silicon Carbide Schottky Diode
Product Overview
The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance
over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The
MSC010SDA070K device is a 700 V, 10 A SiC SBD in a two-lead TO-220 package.
Features
The following are key features of the MSC010SDA070K device:
•
•
•
•
•
No reverse recovery
Low forward voltage
Low leakage current
Avalanche-energy rated
RoHS compliant
Benefits
The following are benefits of the MSC010SDA070K device:
•
•
•
•
•
High switching frequency
Low switching losses
Low noise (EMI) switching
Higher reliability systems
Increased system power density
Applications
The MSC010SDA070K device is designed for the following applications:
•
•
Power factor correction (PFC)
Anti-parallel diode
– Switch-mode power supply
– Inverters/converters
– Motor controllers
Freewheeling diode
– Switch-mode power supply
– Inverters/converters
Snubber/clamp diode
•
•
©
2021 Microchip Technology Inc.
Datasheet
DS-00003907A-page 1
MSC010SDA070K
Device Specifications
1.
Device Specifications
This section shows the specifications of the MSC010SDA070K device.
1.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the MSC010SDA070K device. T
C
= 25 °C unless
otherwise specified.
Table 1-1. Absolute Maximum Ratings
Symbol
V
R
V
RRM
V
RWM
I
F
Parameter
Maximum DC reverse voltage
Maximum peak repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC forward current
T
C
= 25 °C
T
C
= 135 °C
T
C
= 145 °C
I
FRM
I
FSM
P
TOT
Repetitive peak forward surge current (T
C
= 25 °C, tp = 8.3 ms, half
sine wave)
Non-repetitive forward surge current (T
C
= 25 °C, tp = 8.3 ms, half
sine wave)
Total power dissipation
T
C
= 25 °C
T
C
= 110 °C
E
AS
Single-pulse avalanche energy (starting T
J
= 25 °C,
peak I
L
= 10 A)
100
24
10
8
34
58
83
36
mJ
W
A
Ratings
700
Unit
V
The following table shows the thermal and mechanical characteristics of the MSC010SDA070K device.
Table 1-2. Thermal and Mechanical Characteristics
Symbol
R
θJC
T
J
, T
STG
T
L
Wt
Characteristic/Test Conditions
Junction-to-case thermal resistance
Operating junction and storage temperature
range
Lead temperature for 10 seconds
Package weight
0.07
1.9
Mounting torque, 6-32 or M3 screw
10
1.1
–55
Min
Typ
1.30
Max
1.80
175
300
oz
g
lbf-in
N-m
Unit
°C/W
°C
©
2021 Microchip Technology Inc.
Datasheet
DS-00003907A-page 2
MSC010SDA070K
Device Specifications
1.2
Electrical Performance
The following table shows the static characteristics of the MSC010SDA070K device. T
J
= 25 °C unless otherwise
specified.
Table 1-3. Static Characteristics
Symbol
V
F
Characteristic
Forward voltage
Test Conditions
I
F
= 10 A, T
J
= 25 °C
I
F
= 10 A, T
J
= 175 °C
I
RM
Reverse leakage current
V
R
= 700 V, T
J
= 25 °C
V
R
= 700 V, T
J
= 175 °C
Q
C
C
J
Total capacitive charge
Junction capacitance
V
R
= 400 V
V
R
= 1 V, f = 1 MHz
V
R
= 200 V, f = 1 MHz
V
R
= 400 V, f = 1 MHz
Min
Typ
1.5
1.8
3
15
27
353
54
46
nC
pF
200
µA
Max
1.8
Unit
V
1.3
Typical Performance Curves
This section shows the typical performance curves of the MSC010SDA070K device.
Figure 1-1. Maximum Transient Thermal Impedance
©
2021 Microchip Technology Inc.
Datasheet
DS-00003907A-page 3
MSC010SDA070K
Device Specifications
Figure 1-2. Forward Current vs. Forward Voltage
Figure 1-3. Max. Forward Current vs. Case Temp.
Figure 1-4. Max. Power Dissipation vs. Case Temp.
Figure 1-5. Reverse Current vs. Reverse Voltage
©
2021 Microchip Technology Inc.
Datasheet
DS-00003907A-page 4
MSC010SDA070K
Device Specifications
Figure 1-6. Total Charge vs. Reverse Voltage
Figure 1-7. Capacitance vs. Reverse Voltage
©
2021 Microchip Technology Inc.
Datasheet
DS-00003907A-page 5
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
EEWORLD
