QH8K51TR datasheet, PDF - EEWORLD Datasheet

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QH8K51TR: DescriptionMOSFET - Array 2 N-Channel (Dual) 100V 2A (Ta) 1.1W (Ta) Surface Mount Type TSMT8; CategoryDiscrete semiconductor The transistor; File Size1MB，14 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

QH8K51TR Overview

QH8K51TR is a low on-resistance MOSFET suitable for switching applications. Low on-resistance small surface mount package (TSMT8)

QH8K51TR Parametric

Parameter Name	Attribute value
category	Discrete semiconductor;The transistor
Maker	ROHM Semiconductor
series	-
Package	Tape and Reel (TR) Cut Tape (CT)
technology	MOSFET (metal oxide)
Configuration	2 N-channel (dual)
FET function	-
Drain-source voltage (Vdss)	100V
Current at 25°C - Continuous Drain (Id)	2A（Ta）
On-resistance (maximum value) at different Id and Vgs	325 milliohms @ 2A, 10V
Vgs(th) (maximum value) when different Id	2.5V @ 1mA
Gate charge (Qg) (maximum value) at different Vgs	4.7nC @ 5V
Input capacitance (Ciss) (maximum value) at different Vds	290pF @ 25V
Power - Max	1.1W（Ta）
Operating temperature	150°C（TJ）
Installation type	surface mount type
Package/casing	8-SMD, flat leads
Supplier device packaging	TSMT8
Basic product number	QH8K51

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QH8K51

100V Nch+Nch Small Signal MOSFET

Datasheet

Outline

DSS

DS(on)

(Max.)

Features

100V

325mΩ

±2A

1.5W

TSMT8

Inner circuit

1) Low on - resistance

2) Small Surface Mount Package (TSMT8)

Packaging specifications

Packing

Application

Embossed

Tape

180

3000

K51

Value

100

±2

±6

±20

1.5

1.25

1.1

150

-55 to +150

℃

Reel size (mm)

Type

Tape width (mm)

Quantity (pcs)

Taping code

Marking

Switching

Absolute maximum ratings

= 25°C ,unless otherwise specified) <Tr1 and Tr2>

Parameter

Drain - Source voltage

Continuous drain current

Pulsed drain current

Gate - Source voltage

total

Power dissipation

Junction temperature

Operating junction and storage temperature range

www.rohm.com

Symbol

DSS

DP*1

GSS

element

total

D*2

D*3

stg

1/11

Unit

20190527 - Rev.003

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