SH8K25
40V Nch+Nch Power MOSFET
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Outline
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
40V
85mΩ
±5.2A
3W
SOP8
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Features
1) Low on - resistance
2) Small Surface Mount Package
3) Pb-free lead plating ; RoHS compliant
4) Halogen Free
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Inner circuit
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Packaging specifications
Packing
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Application
Switching
Type
Reel size (mm)
Tape width (mm)
Quantity (pcs)
Taping code
Marking
Value
40
±5.2
±8
±12
8
0.48
3
2
1.4
150
-55 to +150
Embossed
Tape
330
12
2500
TB
SH8K25
Unit
V
A
A
V
A
mJ
W
℃
℃
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Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation (total)
Junction temperature
Operating junction and storage temperature range
Symbol
V
DSS
I
D*1
I
DP*2
V
GSS
I
AS*3
E
AS*3
P
D*1
P
D*4
P
D*5
T
j
T
stg
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© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190527 - Rev.004
SH8K25
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Thermal resistance
Datasheet
Parameter
Thermal resistance, junction - ambient (total)
Symbol
R
thJA*4
R
thJA*5
Values
Min.
-
-
Typ.
-
-
Max.
62.5
89.2
Unit
℃
/W
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Electrical characteristics (T
a
= 25°C)
<Tr1 and Tr2>
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate resistance
Forward Transfer
Admittance
Symbol
Conditions
Values
Min.
40
-
-
-
1.0
-
-
-
-
1.0
Typ.
-
27.3
-
-
-
-4.6
60
80
19
-
Max.
-
-
1
±10
2.5
-
85
112
-
-
Unit
V
mV/
℃
μA
μA
V
mV/
℃
mΩ
Ω
S
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Δ
V
(BR)DSS
I
D
= 1mA
ΔT
j
referenced to 25
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= 40V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= 10V, I
D
= 1mA
Δ
V
GS(th)
I
D
= 1mA
ΔT
j
referenced to 25
℃
R
DS(on)*6
R
G
|Y
fs
|
*6
V
GS
= 10V, I
D
= 5.2A
V
GS
= 4.5V, I
D
= 4.0A
f = 1MHz, open drain
V
DS
= 10V, I
D
= 4A
*1 Pw ≤ 1s, Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L
⋍
10μH, V
DD
= 20V, R
G
= 25Ω, Starting T
½
= 25
℃
Fig.3-1,3-2
*4 Mounted on a ceramic board (30×30×0.8mm)
*5 Mounted on a Cu board (40×40×0.8mm)
*6 Pulsed
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© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20190527 - Rev.004
SH8K25
Datasheet
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Electrical characteristics
(T
a
= 25°C) <Tr1 and Tr2>
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*6
t
r*6
t
d(off)*6
t
f*6
Conditions
Min.
V
GS
= 0V
V
DS
= 10V
f = 1MHz
V
DD
⋍
20V,V
GS
= 10V
Unit
Typ.
100
50
15
6
5
17
3
Max.
-
-
-
-
-
ns
-
-
pF
-
-
-
-
-
-
-
I
D
= 2A
R
L
= 10Ω
R
G
= 10Ω
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Gate charge characteristics
(T
a
= 25°C) <Tr1 and Tr2>
Values
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
Q
g*6
Q
gs*6
Q
gd*6
V
DD
⋍
20V, I
D
= 4A
V
GS
= 5V
Conditions
Min.
-
-
-
Typ.
1.7
0.9
0.3
Max.
-
-
-
nC
Unit
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
<Tr1 and Tr2>
Values
Parameter
Continuous forward current
Pulse forward current
Forward voltage
Symbol
I
S
I
SP*2
V
SD*6
Conditions
Min.
T
a
= 25
℃
V
GS
= 0V, I
S
= 4A
-
-
-
Typ.
-
-
-
Max.
1.6
A
8
1.2
V
Unit
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© 2019 ROHM Co., Ltd. All rights reserved.
3/11
20190527 - Rev.004
SH8K25
Datasheet
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2019 ROHM Co., Ltd. All rights reserved.
4/11
20190527 - Rev.004
SH8K25
Datasheet
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Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
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© 2019 ROHM Co., Ltd. All rights reserved.
5/11
20190527 - Rev.004