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BSZ011NE2LS5IATMA1 PDF

BSZ011NE2LS5IATMA1

Description
Surface mount type N channel 25 V 35A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) PG-TSDSON-8-FL
CategoryDiscrete semiconductor    The transistor   
File Size1MB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSZ011NE2LS5IATMA1 Overview

The Infineon OptiMOS 5 power transistor is an N-channel MOSFET optimized for use in high-performance buck converters. Comply with IEC61249-2-21 halogen-free standard. Monolithic integrated Schottky-like diode with ultra-low on-resistance, lead-free plating, RoHS compliant

BSZ011NE2LS5IATMA1 Parametric

Parameter NameAttribute value
categoryDiscrete semiconductor;The transistor
MakerInfineon
seriesOptiMOS™ 5
PackageTape and Reel (TR) Cut Tape (CT)
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)25 V
Current at 25°C - Continuous Drain (Id)35A(Ta),40A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
On-resistance (maximum value) at different Id and Vgs1.1 milliohm @ 20A, 10V
Vgs(th) (maximum value) when different Id2V @ 250µA
Gate charge (Qg) (maximum value) at different Vgs50 nC @ 10 V
Vgs (maximum value)±16V
Input capacitance (Ciss) (maximum value) at different Vds3400 pF @ 12 V
FET function-
Power dissipation (maximum)2.1W(Ta),69W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount type
Supplier device packagingPG-TSDSON-8-FL
Package/casing8-PowerTDFN
Basic product numberBSZ011

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