BSZ011NE2LS5I
MOSFET
OptiMOS
TM
5Power-Transistor,25V
Features
•Optimizedforhighperformancebuckconverters
•MonolithicintegratedSchottky-likediode
•Verylowon-resistanceR
DS(on)
@V
GS
=4.5V
•100%avalanchetested
•N-channel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
TSDSON-8FL
(enlarged source interconnection)
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
S1
S2
S3
G4
8D
7D
6D
5D
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
oss
Q
G
(0V..4.5V)
Value
25
1.1
202
29
17
Unit
V
mΩ
A
nC
nC
Type/OrderingCode
BSZ011NE2LS5I
Package
PG-TSDSON-8 FL
Marking
11NE25I
RelatedLinks
-
Final Data Sheet
1
Rev.2.1,2020-10-23
OptiMOS
TM
5Power-Transistor,25V
BSZ011NE2LS5I
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.1,2020-10-23
OptiMOS
TM
5Power-Transistor,25V
BSZ011NE2LS5I
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-
-
-16
-
-
-55
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
202
128
173
109
35
808
119
16
69
2.1
150
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=4.5V,T
C
=25°C
V
GS
=4.5V,T
C
=100°C
V
GS
=10V,T
A
=25°C,
R
THJA
=60°C/W
2)
T
C
=25°C
I
D
=20A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
THJA
=60°C/W
2)
IEC climatic category; DIN IEC 68-1:
55/150/56
Continuous drain current
1)
I
D
A
Pulsed drain current
3)
Avalanche energy, single pulse
4)
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
A
mJ
V
W
°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm² cooling area
Symbol
R
thJC
R
thJC
R
thJA
Values
Min.
-
-
-
Typ.
-
-
-
Max.
1.8
20
60
Unit
Note/TestCondition
°C/W -
°C/W -
°C/W -
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.1,2020-10-23
OptiMOS
TM
5Power-Transistor,25V
BSZ011NE2LS5I
3Electricalcharacteristics
atT
j
=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Breakdown voltage temperature
coefficient
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Symbol
V
(BR)DSS
Values
Min.
25
Typ.
-
15
-
-
0.9
10
0.82
1.1
0.7
160
Max.
-
-
2
0.5
-
100
1.1
1.5
1.2
-
Unit
V
Note/TestCondition
V
GS
=0V,I
D
=10mA
dV
(BR)DSS
/dT
j
-
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
1.2
-
-
-
-
-
-
80
mV/°C
I
D
=10mA,referencedto25°C
V
mA
nA
mΩ
Ω
S
V
DS
=V
GS
,I
D
=250µA
V
DS
=20V,V
GS
=0V,T
j
=25°C
V
DS
=20V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=20A
V
GS
=4.5V,I
D
=20A
-
|V
DS
|≥2|I
D
|R
DS(on)max
,I
D
=20A
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
2500
1200
92
5
4
26
3
Max.
3400
1600
-
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=12V,f=1MHz
V
GS
=0V,V
DS
=12V,f=1MHz
V
GS
=0V,V
DS
=12V,f=1MHz
V
DD
=12V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
1)
Defined by design. Not subject to production test.
Final Data Sheet
4
Rev.2.1,2020-10-23
OptiMOS
TM
5Power-Transistor,25V
BSZ011NE2LS5I
Table6Gatechargecharacteristics
1)
Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
2)
Gate plateau voltage
Gate charge total
2)
Gate charge total, sync. FET
Output charge
2)
Symbol
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
Q
g(sync)
Q
oss
Values
Min.
-
-
-
-
-
-
-
-
-
Typ.
5.6
3.5
3.5
5.7
17
2.3
37
16
29
Max.
-
-
-
-
23
-
50
-
38
Unit
nC
nC
nC
nC
nC
V
nC
nC
nC
Note/TestCondition
V
DD
=12V,I
D
=20A,V
GS
=0to4.5V
V
DD
=12V,I
D
=20A,V
GS
=0to4.5V
V
DD
=12V,I
D
=20A,V
GS
=0to4.5V
V
DD
=12V,I
D
=20A,V
GS
=0to4.5V
V
DD
=12V,I
D
=20A,V
GS
=0to4.5V
V
DD
=12V,I
D
=20A,V
GS
=0to4.5V
V
DD
=12V,I
D
=20A,V
GS
=0to10V
V
DS
=0.1V,V
GS
=0to4.5V
V
DD
=12V,V
GS
=0V
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
I
S
I
S,pulse
V
SD
t
rr
Q
rr
Values
Min.
-
-
-
-
-
Typ.
-
-
0.50
19
20
Max.
107
808
0.65
-
-
Unit
A
A
V
ns
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
V
GS
=0V,I
F
=11A,T
j
=25°C
V
R
=20V,I
F
=20A,di
F
/dt=400A/µs
V
R
=20V,I
F
=20A,di
F
/dt=400A/µs
1)
2)
See
″Gate
charge waveforms″ for parameter definition
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.1,2020-10-23
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