Parameter Name | Attribute value |
category | Discrete semiconductor;The transistor |
Maker | Infineon |
series | OptiMOS™ 5 |
Package | Tape and Reel (TR) Cut Tape (CT) |
FET type | N channel |
technology | MOSFET (metal oxide) |
Drain-source voltage (Vdss) | 25 V |
Current at 25°C - Continuous Drain (Id) | 35A(Ta),40A(Tc) |
Drive voltage (maximum Rds On, minimum Rds On) | 4.5V,10V |
On-resistance (maximum value) at different Id and Vgs | 1.1 milliohm @ 20A, 10V |
Vgs(th) (maximum value) when different Id | 2V @ 250µA |
Gate charge (Qg) (maximum value) at different Vgs | 50 nC @ 10 V |
Vgs (maximum value) | ±16V |
Input capacitance (Ciss) (maximum value) at different Vds | 3400 pF @ 12 V |
FET function | - |
Power dissipation (maximum) | 2.1W(Ta),69W(Tc) |
Operating temperature | -55°C ~ 150°C(TJ) |
Installation type | surface mount type |
Supplier device packaging | PG-TSDSON-8-FL |
Package/casing | 8-PowerTDFN |
Basic product number | BSZ011 |
Part Number | Manufacturer | Category | Description | Datasheet |
---|---|---|---|---|
IPLK70R1K4P7ATMA1 | Infineon | Discrete semiconductor;The transistor | 700 V CoolMOS™ P7 superjunction MOSFET in ThinPAK 5x6 package | Download |
IPW60R045P7XKSA1 | Infineon | Discrete semiconductor;The transistor | Through hole N channel 650 V 61A (Tc) 201W (Tc) PG-TO247-3-41 | Download |
IPLK70R750P7ATMA1 | Infineon | Discrete semiconductor;The transistor | Surface mount type N channel 700 V - - PG-TDSON-8 | Download |
SIHH080N60E-T1-GE3 | Vishay | Discrete semiconductor;The transistor | N-channel enhancement mode MOS transistor, E Series, Vds=650 V, 32 A, PowerPAK 8 x 8 package, surface mount | Download |
RV1S2285ACCSP-10YV#SC0 | Renesas Electronics Corporation | Discrete semiconductor;The transistor | Opto-Isolator Transistor Output 5000Vrms 1 Channel 4-LSSOP | Download |
SCTW35N65G2VAG | STMicroelectronics | Discrete semiconductor;The transistor | N-Channel Depletion Mode MOSFET Module 650 V 45A (Tc) 240W (Tc) HiP247™ | Download |
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