RQ5E015RPTL datasheet, PDF - EEWORLD Datasheet

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RQ5E015RPTL: DescriptionP-channel enhancement type MOS tube, Vds=30V, 1.5A, SOT-346 package, surface mount; CategoryDiscrete semiconductor The transistor; File Size1MB，14 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

RQ5E015RPTL Parametric

Parameter Name	Attribute value
category	Discrete semiconductor;The transistor
Maker	ROHM Semiconductor
series	-
Package	Tape and Reel (TR) Cut Tape (CT)
FET type	P channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	30 V
Current at 25°C - Continuous Drain (Id)	1.5A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	4V，10V
On-resistance (maximum value) at different Id and Vgs	160 milliohms @ 1.5A, 10V
Vgs(th) (maximum value) when different Id	2.5V @ 1mA
Gate charge (Qg) (maximum value) at different Vgs	3.2 nC @ 5 V
Vgs (maximum value)	±20V
Input capacitance (Ciss) (maximum value) at different Vds	230 pF @ 10 V
FET function	-
Power dissipation (maximum)	700mW（Ta）
Operating temperature	150°C（TJ）
Installation type	surface mount type
Supplier device packaging	TSMT3
Package/casing	SC-96
Basic product number	RQ5E015

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RQ5E015RP

Pch -30V -1.5A Small Signal MOSFET

Datasheet

Outline

DSS

DS(on)

(Max.)

-30V

160mΩ

±1.5A

1.0W

SOT-346T

SC-96

TSMT3

Inner circuit

Features

1) Low on - resistance

2) Built-in G-S Protection Diode

3) Small Surface Mount Package (TSMT3)

4) Pb-free lead plating ; RoHS compliant

Packaging specifications

Packing

Reel size (mm)

Tape width (mm)

Quantity (pcs)

Taping code

Marking

Absolute maximum ratings

= 25°C ,unless otherwise specified)

Application

Type

Switching

Embossed

Tape

180

3000

Parameter

Drain - Source voltage

Continuous drain current

Pulsed drain current

Gate - Source voltage

Power dissipation

Junction temperature

Operating junction and storage temperature range

Symbol

DSS

DP*1

GSS

D*2

D*3

stg

Value

-30

±1.5

±6

±20

1.0

0.7

150

-55 to +150

Unit

℃

www.rohm.com

1/11

20190527 - Rev.002

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