SCTW35N65G2VAG
Datasheet
Automotive-grade silicon carbide Power MOSFET
650 V, 45 A, 55 mΩ (typ., T
J
= 25 °C) in an HiP247 package
Features
Order code
SCTW35N65G2VAG
V
DS
650 V
R
DS(on)
typ.
55 mΩ
I
D
45 A
1
HiP247
2
3
•
•
•
AEC-Q101 qualified
Very fast and robust intrinsic body diode
Low capacitance
Applications
D(2, TAB)
•
•
•
Switching mode power supply
EV chargers
DC-DC converters
G(1)
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2
nd
generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.
S(3)
AM01475v1_noZen
Product status link
SCTW35N65G2VAG
Product summary
Order code
Marking
Package
Packing
SCTW35N65G2VAG
SCT35N65G2VAG
HiP247
Tube
DS12885
-
Rev 3
-
September 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
SCTW35N65G2VAG
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
V
DS
V
GS
Drain-source voltage
Gate-source voltage
Gate-source voltage (recommended operating range)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total power dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Parameter
Value
650
-10 to 22
-5 to 18
45
35
90
240
-55 to 200
Unit
V
V
I
D
I
DM
(1)
P
TOT
T
stg
T
J
A
A
W
°C
°C
1. Pulse width is limited by safe operating area.
Table 2.
Thermal data
Symbol
R
thj-case
R
thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Parameter
Value
0.72
40
Unit
°C/W
°C/W
DS12885
-
Rev 3
page 2/12
SCTW35N65G2VAG
Electrical characteristics
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified).
Table 3.
On/off states
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Test conditions
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 650 V
V
GS
= 0 V, V
DS
= 650 V, T
J
= 200 °C
(1)
V
DS
= 0 V, V
GS
= -10 to 22 V
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 20 V, I
D
= 20 A
R
DS(on)
Static drain-source on-resistance
V
GS
= 18 V, I
D
= 20 A
V
GS
= 20 V, I
D
= 20 A, T
J
= 200 °C
1. Defined by design, not subject to production test.
1.8
3.2
45
55
68
Min.
650
50
100
±250
5
67
mΩ
µA
nA
V
Typ.
Max.
Unit
V
Table 4.
Dynamic
Symbol
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400 V, I
D
= 20 A, V
GS
= 0 to 20 V
f = 1 MHz, I
D
= 0 A
V
GS
= 0 V, V
DS
= 400 V, f = 1 MHz
Test conditions
Min.
-
-
-
-
-
-
-
Typ.
1370
125
30
2
73
14
27
Max.
-
-
-
-
-
-
-
Unit
pF
pF
pF
Ω
nC
nC
nC
Table 5.
Switching energy (inductive load)
Symbol
E
on
E
off
Parameter
Turn-on switching energy
Turn-off switching energy
Test conditions
V
DD
= 400 V, I
D
= 20 A,
R
G
= 4.7 Ω, V
GS
= -5 to 20 V
Min.
-
-
Typ.
100
35
Max.
-
-
Unit
µJ
µJ
Table 6.
Switching times
Symbol
t
d(on)
t
f
t
d(off)
t
r
Parameter
Turn-on delay time
Fall time
Turn-off delay time
Rise time
V
DD
= 400 V, I
D
= 20 A,
R
G
= 4.7 Ω, V
GS
= -5 to 20 V
Test conditions
Min.
-
-
-
-
Typ.
16
14
35
9
Max.
-
-
-
-
Unit
ns
ns
ns
ns
DS12885
-
Rev 3
page 3/12
SCTW35N65G2VAG
Electrical characteristics
Table 7.
Reverse diode characteristics
Symbol
V
SD
t
rr
Q
rr
I
RRM
Parameter
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V
DD
= 400 V, I
F
= 20 A, di/dt = 1000 A/µs
Test conditions
V
GS
= 0 V, I
F
= 20 A,
Min.
-
-
-
-
Typ.
3.3
18
85
7
Max.
-
-
-
-
Unit
V
ns
nC
A
DS12885
-
Rev 3
page 4/12
SCTW35N65G2VAG
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
I
D
(A)
GADG270320171257SOA
Operation in this area
is limited by max.
R
DS(on)
Figure 2.
Thermal impedance
K
GADG270320171310ZTH
10
1
t
p
=100 µs
t
p
=1 ms
10
0
T
j
≤ 200 °C
T
c
= 25 °C
single pulse
10
0
10
-1
single pulse
t
p
=10 ms
10
-1
10
-1
10
1
10
2
V
DS
(V)
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Figure 3.
Output characteristics (T
J
= 25 °C)
I
D
(A)
80
SIC140220171450OC25
V
GS
= 20 V
V
GS
= 16 V
V
GS
= 14 V
Figure 4.
Output characteristics (T
J
= 175 °C)
I
D
(A)
80
SIC140220171450OC175
V
GS
= 20 V
V
GS
= 16 V
V
GS
= 14 V
V
GS
= 12 V
V
GS
= 12 V
60
60
V
GS
= 10 V
40
V
GS
= 10 V
40
V
GS
= 8 V
20
V
GS
= 8 V
20
V
GS
= 6 V
V
GS
= 6 V
0
0
2
4
6
8
10
12
V
DS
(V)
0
0
2
4
6
8
10
12
V
DS
(V)
Figure 5.
Transfer characteristics
I
D
(A)
80
GADG140220171450TCH
Figure 6.
Power dissipation
P
TOT
(W)
240
200
T
J
= 200 °C
GADG220120191057PDT
V
DS
= 10 V
60
T
J
= 175 °C
T
J
= 25 °C
160
120
80
40
20
0
0
40
4
8
12
16
V
GS
(V)
0
-75
-25
25
75
125
175
T
C
(°C)
DS12885
-
Rev 3
page 5/12
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