NXH80T120L2Q0P2TG datasheet, PDF

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NXH80T120L2Q0S2G/S2TG,

NXH80T120L2Q0P2G

Q0PACK Module

The NXH80T120L2Q0S2/P2G is a power module containing a

T−type neutral point clamped (NPC) three level inverter stage. The

integrated field stop trench IGBTs and fast recovery diodes provide

lower conduction losses and switching losses, enabling designers to

achieve high efficiency and superior reliability.

Features

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•

Low Switching Loss

Low V

CESAT

Compact 65.9 mm x 32.5 mm x 12 mm Package

Thermistor

Options with pre−applied thermal interface material (TIM) and

without pre−applied TIM

•

Options with solderable pins and press−fit pins

Typical Applications

Q0PACK

CASE 180AA

PRESS−FIT PINS

Q0PACK

CASE 180AB

SOLDERABLE PINS

•

Solar Inverter

•

Uninterruptable Power Supplies

15,16

Half Bridge

IGBTs & Diodes

T1

1200V/80A

17

18

5,14

D2

D3

8,9,10,11

MARKING DIAGRAMS

NXH80T120L2Q0P2G

ATYYWW

D1

NXH80T120L2Q0S2G

ATYYWW

T2

7

6

T3

13 12

Neutral Point

IGBTs & Diodes

650V/50A

NXH80T120L2Q0S2G = Specific Device Code

G = Pb−free Package

A = Assembly Site Code

T = Test Site Code

YYWW = Year and Work Week Code

2

1

T4

D4

PIN ASSIGNMENTS

19

NTC

20

12 13

11

10

9

8

7 6

5

4 3

14

15 16

17 18

19

20

2 1

3,4

Figure 1. Schematic Diagram

ORDERING INFORMATION

See detailed ordering and shipping information in the

dimensions section on page 13 of this data sheet.

©

Semiconductor Components Industries, LLC, 2017

May, 2019

−

Rev. 6

1

Publication Order Number:

NXH80T120L2Q0S2G/D

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

Table 1. MAXIMUM RATINGS

Rating

HALF BRIDGE IGBT

Collector−Emitter Voltage

Gate−Emitter Voltage

Continuous Collector Current @ T

h

= 80°C (T

J

= 175°C)

Pulsed Collector Current (T

J

= 175°C)

Maximum Power Dissipation @ T

h

= 80°C (T

J

= 175°C)

Short Circuit Withstand Time @ V

GE

= 15 V, V

CE

= 600 V, T

J

v

150°C

Minimum Operating Junction Temperature

Maximum Operating Junction Temperature

NEUTRAL POINT IGBT

Collector−Emitter Voltage

Gate−Emitter Voltage

Continuous Collector Current @ T

h

= 80°C (T

J

= 175°C)

Pulsed Collector Current (T

J

= 175°C)

Maximum Power Dissipation @ T

h

= 80°C (T

J

= 175°C)

Short Circuit Withstand Time @ V

GE

= 15 V, V

CE

= 400 V, T

J

v

150°C

Minimum Operating Junction Temperature

Maximum Operating Junction Temperature

HALF BRIDGE DIODE

Peak Repetitive Reverse Voltage

Continuous Forward Current @ T

h

= 80°C (T

J

= 175°C)

Repetitive Peak Forward Current (T

J

= 175°C, t

p

limited by T

Jmax

)

Maximum Power Dissipation @ T

h

= 80°C (T

J

= 175°C)

Minimum Operating Junction Temperature

Maximum Operating Junction Temperature

NEUTRAL POINT DIODE

Peak Repetitive Reverse Voltage

Continuous Forward Current @ T

h

= 80°C (T

J

= 175°C)

Repetitive Peak Forward Current (T

J

= 175°C, t

p

limited by T

Jmax

)

Maximum Power Dissipation @ T

h

= 80°C (T

J

= 175°C)

Minimum Operating Junction Temperature

Maximum Operating Junction Temperature

THERMAL PROPERTIES

Storage Temperature range

INSULATION PROPERTIES

Isolation test voltage, t = 1 sec, 60 Hz

Creepage distance

V

is

3000

12.7

V

RMS

mm

T

stg

−40

to 125

°C

V

RRM

I

F

I

FRM

P

tot

T

JMIN

T

JMAX

650

33

99

63

−40

150

V

A

W

°C

V

RRM

I

F

I

FRM

P

tot

T

JMIN

T

JMAX

1200

28

84

73

−40

150

V

A

W

°C

V

CES

V

GE

I

C

I

Cpulse

P

tot

T

sc

T

JMIN

T

JMAX

600

±20

49

147

86

5

−40

150

V

A

W

ms

°C

V

CES

V

GE

I

C

I

Cpulse

P

tot

T

sc

T

JMIN

T

JMAX

1200

±20

67

201

158

5

−40

150

V

A

W

ms

°C

Symbol

Value

Unit

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe

Operating parameters.

Table 2. RECOMMENDED OPERATING RANGES

Rating

Module Operating Junction Temperature

Symbol

T

J

Min

−40

Max

150

Unit

°C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

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2

NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

Table 3. ELECTRICAL CHARACTERISTICS

T

J

= 25°C unless otherwise noted

Parameter

HALF BRIDGE IGBT CHARACTERISTICS

Collector−Emitter Cutoff Current

Collector−Emitter Saturation Voltage

Gate−Emitter Threshold Voltage

Gate Leakage Current

Turn−on Delay Time

Rise Time

Turn−off Delay Time

Fall Time

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Turn−on Delay Time

Rise Time

Turn−off Delay Time

Fall Time

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Thermal Resistance

−

chip−to−heatsink

V

CE

= 600 V, I

C

= 80 A, V

GE

= +15 V

Thermal grease,

Thickness = 76

mm

±2%,

l

= 2.9 W/mK

I

F

= 60 A, T

J

= 25°C

I

F

= 60 A, T

J

= 150°C

Reverse Recovery Time

Reverse Recovery Charge

Peak Reverse Recovery Current

Peak Rate of Fall of Recovery Current

Reverse Recovery Energy

Reverse Recovery Time

Reverse Recovery Charge

Peak Reverse Recovery Current

Peak Rate of Fall of Recovery Current

Reverse Recovery Energy

Thermal Resistance

−

chip−to−heatsink

NEUTRAL POINT IGBT CHARACTERISTICS

Collector−Emitter Cutoff Current

Collector−Emitter Saturation Voltage

Gate−Emitter Threshold Voltage

Gate Leakage Current

V

GE

= 0 V, V

CE

= 600 V

V

GE

= 15 V, I

C

= 50 A, T

J

= 25°C

V

GE

= 15 V, I

C

= 50 A, T

J

= 150°C

V

GE

= V

CE

, I

C

= 1.2 mA

V

GE

= 20 V, V

CE

= 0 V

V

GE(TH)

I

GES

I

CES

V

CE(sat)

–

1.40

1.50

5.45

–

250

1.75

–

6.4

200

V

nA

mA

V

Thermal grease,

Thickness = 76

mm

±2%,

l

= 2.9 W/mK

T

J

= 125°C

V

CE

= 350 V, I

C

= 60 A

V

GE

=

±15

V, R

G

= 4.7

W

T

J

= 25°C

V

CE

= 350 V, I

C

= 60 A

V

GE

=

±15

V, R

G

= 4.7

W

t

rr

Q

rr

I

RRM

di/dt

E

rr

t

rr

Q

rr

I

RRM

di/dt

E

rr

R

thJH

V

CE

= 20 V, V

GE

= 0 V, f = 10 kHz

T

J

= 125°C

V

CE

= 350 V, I

C

= 60 A

V

GE

=

±15

V, R

G

= 4.7

W

V

GE

= 0 V, V

CE

= 1200 V

V

GE

= 15 V, I

C

= 80 A, T

J

= 25°C

V

GE

= 15 V, I

C

= 80 A, T

J

= 150°C

V

GE

= V

CE

, I

C

= 1.5 mA

V

GE

= 20 V, V

CE

= 0 V

T

J

= 25°C

V

CE

= 350 V, I

C

= 60 A

V

GE

=

±15V,

R

G

= 4.7

W

V

GE(TH)

I

GES

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

C

ies

C

oes

C

res

Q

g

R

thJH

I

CES

V

CE(sat)

–

2.05

2.10

5.45

–

61

28

205

41

550

1100

58

30

230

63

720

1700

19400

400

340

800

0.60

300

2.85

–

6.4

300

–

nC

°C/W

pF

mJ

ns

mJ

V

nA

ns

mA

V

Test Conditions

Symbol

Min

Typ

Max

Unit

NEUTRAL POINT DIODE CHARACTERISTICS

Diode Forward Voltage

V

F

–

1.7

1.6

39

1.1

48

3400

400

78

2.0

59

1600

550

1.50

2.2

–

ns

mC

A

A/ms

mJ

ns

mC

A

A/ms

mJ

°C/W

V

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NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G

Table 3. ELECTRICAL CHARACTERISTICS

T

J

= 25°C unless otherwise noted

Parameter

NEUTRAL POINT IGBT CHARACTERISTICS

Turn−on Delay Time

Rise Time

Turn−off Delay Time

Fall Time

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Turn−on Delay Time

Rise Time

Turn−off Delay Time

Fall Time

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Thermal Resistance

−

chip−to−heatsink

HALF BRIDGE DIODE CHARACTERISTICS

Diode Forward Voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Peak rate of fall of recovery current

Reverse recovery energy

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Peak rate of fall of recovery current

Reverse recovery energy

Thermal Resistance

−

chip−to−heatsink

THERMISTOR CHARACTERISTICS

Nominal resistance

Deviation of R25

Power dissipation

Power dissipation constant

B−value

B(25/50), tolerance

±3%

B(25/100), tolerance

±3%

T = 25°C

T = 100°C

R

25

R

100

DR/R

P

D

–

−5

–

22

1486

–

200

2

3950

3998

–

5

–

kW

W

%

mW

mW/K

K

Thermal grease,

Thickness = 76

mm

±2%,

l

= 2.9 W/mK

T

J

= 125°C

V

CE

= 350 V, I

C

= 60 A

V

GE

=

±15

V, R

G

= 4.7

W

I

F

= 40 A, T

J

= 25°C

I

F

= 40 A, T

J

= 150°C

T

J

= 25°C

V

CE

= 350 V, I

C

= 60 A

V

GE

=

±15

V, R

G

= 4.7

W

t

rr

Q

rr

I

RRM

di/dt

E

rr

t

rr

Q

rr

I

RRM

di/dt

E

rr

R

thJH

V

F

–

2.11

1.50

45

2.7

110

7100

1000

185

6

150

5900

1900

1.30

3.10

–

ns

mC

A

A/ms

mJ

ns

mC

A

A/ms

mJ

°C/W

V

CE

= 480 V, I

C

= 50 A, V

GE

= +15 V

Thermal grease,

Thickness = 76

mm

±2%,

l

= 2.9 W/mK

V

CE

= 20 V, V

GE

= 0 V, f = 10 kHz

T

J

= 125°C

V

CE

= 350 V, I

C

= 60 A

V

GE

=

±15

V, R

G

= 4.7

W

T

J

= 25°C

V

CE

= 350 V, I

C

= 60 A

V

GE

=

±15

V, R

G

= 4.7

W

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

C

ies

C

oes

C

res

Q

g

R

thJH

–

30

19

110

23

800

480

32

18

120

35

1100

880

9400

280

250

395

1.10

–

nC

°C/W

pF

mJ

ns

mJ

ns

Test Conditions

Symbol

Min

Typ

Max

Unit

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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Parameter Name	Attribute value
category	Discrete semiconductor;The transistor
Maker	ON Semiconductor
series	-
Package	tray
IGBT type	Trench type field cutoff
Configuration	Three stage inverter
Vce(on) (maximum value) when Vge and Ic are different	1.75V @ 15V，50A
Current - collector cutoff (maximum)	250 µA
enter	standard
NTC thermistor	yes
Operating temperature	-40°C ~ 150°C（TJ）
Installation type	Base installation
Package/casing	module
Supplier device packaging	20-PIM/Q0PACK（55x32.5）
Basic product number	NXH80

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