C3M0280090D
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features
Package
•
•
•
•
•
C3M SiC MOSFET technology
High blocking voltage with low On-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
•
•
•
•
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Applications
•
•
•
•
•
Renewable energy
Lighting
High voltage DC/DC converters
Telecom Power Supplies
Induction Heating
Part Number
C3M0280090D
Package
TO-247-3
Marking
C3M0280090
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain - Source Voltage
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Operating Junction and Storage Temperature
Solder Temperature
Mounting Torque
Value
900
-8/+19
-4/+15
10.2
6.8
22
45
-55 to
+150
260
1
8.8
Unit
V
V
V
A
A
W
˚C
˚C
Nm
lbf-in
Test Conditions
V
GS
= 0 V, I
D
= 100 μA
Note
V
DSmax
V
GSmax
V
GSop
I
D
I
D(pulse)
P
D
T
J
, T
stg
T
L
M
d
AC (f >1 Hz)
Static
V
GS
= 15 V, T
C
= 25˚C
V
GS
= 15 V, T
C
= 100˚C
Pulse width t
P
limited by T
jmax
T
C
=25˚C, T
J
= 150 ˚C
Note: 1
Note: 2
Fig. 19
Fig. 22
Fig. 20
1.6mm (0.063”) from case for 10s
M3 or 6-32 screw
Note (1): When using MOSFET Body Diode V
GSmax
= -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
1
C3M0280090D Rev. 2, 09-2021
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
E
oss
E
ON
E
OFF
t
d(on)
t
r
t
d(off)
t
f
R
G(int)
Q
gs
Q
gd
Q
g
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
oss
Stored Energy
Turn-On Switching Energy (Body Diode FWD)
Turn Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
Min.
900
1.8
Typ.
2.7
2.2
1
10
320
416
3.6
3.6
204
26
3
5.5
80
6
5.3
25
8.5
6.4
23.5
3.0
2.9
9.7
Max.
3.5
100
250
360
Unit
V
Test Conditions
V
GS
= 0 V, I
D
= 100 μA
V
DS
= V
GS
, I
D
= 1.2 mA
V
DS
= V
GS
, I
D
= 1.2 mA,
T
J
= 150ºC
V
DS
= 900 V, V
GS
= 0 V
V
GS
= 15 V, V
DS
= 0 V
V
GS
= 15 V, I
D
= 7.5 A
V
GS
= 15 V, I
D
= 7.5 A, T
J
= 150ºC
V
DS
= 15 V, I
DS
=
7.5 A
V
DS
= 15 V, I
DS
=
7.5 A,
T
J
= 150ºC
V
GS
= 0 V, V
DS
= 600 V
f = 1 MHz
V
AC
= 25 mV
Note
V
V
μA
nA
mΩ
S
Fig. 11
Fig. 4,
5, 6
Fig. 7
pF
Fig. 17,
18
μJ
μJ
Fig. 16
Fig. 26,
29
Note 3
V
DS
= 400 V, V
GS
= -4 V/15 V, I
D
= 7.5 A,
R
G(ext)
= 2.5Ω, L= 201 μH,
T
J
= 150ºC
ns
V
DD
= 400 V, V
GS
= -4 V/15 V
I
D
= 7.5 A, R
G(ext)
= 2.5 Ω,
Timing relative to V
DS
Inductive load
f = 1 MHz
, V
AC
= 25 mV
V
DS
= 400 V, V
GS
= -4 V/15 V
I
D
= 7.5 A
Per IEC60747-8-4 pg 21
Fig. 27,
29
Note 3
Ω
nC
Fig. 12
Reverse Diode Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
V
SD
I
S
I
S, pulse
t
rr
Q
rr
I
rrm
Parameter
Diode Forward Voltage
Continuous Diode Forward Current
Diode pulse Current
Reverse Recover time
Reverse Recovery Charge
Peak Reverse Recovery Current
Typ.
4.8
4.4
Max.
Unit
V
V
Test Conditions
V
GS
= -4 V, I
SD
= 4 A
V
GS
= -4 V, I
SD
= 4 A, T
J
= 150 °C
V
GS
= -4 V
V
GS
= -4 V,
pulse width t
P
limited by T
jmax
V
GS
= -4 V, I
SD
= 7.5 A, V
R
= 400 V
dif/dt = 775 A/µs,
T
J
= 150 °C
Note
Fig. 8,
9, 10
Note 1
Note 1
9
22
24
74
4
A
A
ns
nC
A
Note 1
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
Max.
2.8
40
Unit
°C/W
Test Conditions
Note
Fig. 21
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode
2
C3M0280090D Rev. 2, 09-2021
Typical Performance
20
Conditions:
T
j
= -55 °C
tp = < 200 µs
20
V
GS
= 15V
16
Drain-Source Current, I
DS
(A)
Drain-Source Current, I
DS
(A)
V
GS
= 13V
16
Conditions:
T
j
= 25 °C
tp = < 200 µs
V
GS
= 15V
V
GS
= 13V
12
V
GS
= 11V
12
V
GS
= 11V
8
8
V
GS
= 9V
4
V
GS
= 9V
V
GS
= 7V
4
V
GS
= 7V
0
0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -55 ºC
20
Conditions:
T
j
= 150 °C
tp = < 200 µs
V
GS
= 13V
Figure 2. Output Characteristics T
J
= 25 ºC
2.0
Conditions:
I
DS
= 7.5 A
V
GS
= 15 V
t
p
< 200 µs
V
GS
= 15V
1.8
V
GS
= 11V
16
Drain-Source Current, I
DS
(A)
1.6
On Resistance, R
DS On
(P.U.)
12.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
12
V
GS
= 9V
8
4
V
GS
= 7V
0
0.0
2.0
4.0
6.0
8.0
10.0
0.0
-50
-25
0
Drain-Source Voltage, V
DS
(V)
Junction Temperature, T
j
(°C)
25
50
75
100
125
150
Figure 3. Output Characteristics T
J
= 150 ºC
700
600
Conditions:
V
GS
= 15 V
t
p
< 200 µs
Figure 4. Normalized On-Resistance vs. Temperature
1,200
1,000
Conditions:
I
DS
= 7.5 A
t
p
< 200 µs
500
400
300
200
100
0
T
j
= 150 °C
T
j
= -55 °C
T
j
= 25 °C
On Resistance, R
DS On
(mOhms)
On Resistance, R
DS On
(mOhms)
800
V
GS
= 11 V
600
400
200
0
V
GS
= 13 V
V
GS
= 15 V
0
5
Drain-Source Current, I
DS
(A)
10
15
20
25
-50
-25
0
Junction Temperature, T
j
(°C)
25
50
75
100
125
150
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
C3M0280090D Rev. 2, 09-2021
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
Typical Performance
20
Conditions:
V
DS
= 20 V
tp < 200 µs
-10
-8
-6
-4
-2
0
0
Drain-Source Current, I
DS
(A)
Drain-Source Current, I
DS
(A)
16
T
J
= 150 °C
-4
V
GS
= -4 V
V
GS
= 0 V
V
GS
= -2 V
12
T
J
= 25 °C
-8
8
T
J
= -55 °C
-12
4
0
0
2
4
6
8
10
12
14
Conditions:
T
j
= -55°C
t
p
< 200 µs
-16
Gate-Source Voltage, V
GS
(V)
Drain-Source Voltage V
DS
(V)
-20
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-10
-8
-6
-4
-2
0
0
Figure 8. Body Diode Characteristic at -55 ºC
-10
-8
-6
-4
-2
0
0
Drain-Source Current, I
DS
(A)
-4
V
GS
= -4 V
V
GS
= 0 V
V
GS
= -2 V
Drain-Source Current, I
DS
(A)
-4
V
GS
= -4 V
V
GS
= 0 V
V
GS
= -2 V
-8
-8
-12
-12
Conditions:
T
j
= 25°C
t
p
< 200 µs
-16
Conditions:
T
j
= 150°C
t
p
< 200 µs
-16
Drain-Source Voltage V
DS
(V)
-20
Drain-Source Voltage V
DS
(V)
-20
Figure 9. Body Diode Characteristic at 25 ºC
4.0
3.5
3.0
Conditons
V
GS
= V
DS
I
DS
= 1.2 mA
Figure 10. Body Diode Characteristic at 150 ºC
16
Conditions:
I
DS
= 7.5 A
I
GS
= 11 mA
V
DS
= 400 V
T
J
= 25 °C
12
2.5
2.0
1.5
1.0
0.5
0.0
Gate-Source Voltage, V
GS
(V)
-50
-25
0
25
50
75
100
125
150
Threshold Voltage, V
th
(V)
8
4
0
-4
Junction Temperature T
J
(°C)
0
2
4
6
8
10
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
C3M0280090D Rev. 2, 09-2021
Typical Performance
-10
-8
-6
-4
-2
0
0
-10
-8
-6
-4
-2
0
0
V
GS
= 5 V
-4
Drain-Source Current, I
DS
(A)
Drain-Source Current, I
DS
(A)
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 5 V
-4
V
GS
= 10 V
V
GS
= 15 V
-8
V
GS
= 10 V
V
GS
= 15 V
-8
-12
-12
Conditions:
T
j
= -55 °C
t
p
< 200 µs
-16
Drain-Source Voltage V
DS
(V)
-20
Conditions:
T
j
= 25 °C
t
p
< 200 µs
-16
Drain-Source Voltage V
DS
(V)
-20
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-10
-8
-6
-4
-2
0
Figure 14. 3rd Quadrant Characteristic at 25 ºC
12
10
0
Drain-Source Current, I
DS
(A)
Stored Energy, E
OSS
(µJ)
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
-4
8
6
4
2
0
-8
-12
-16
Conditions:
T
j
= 150 °C
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
-20
0
200
Drain to Source Voltage, V
DS
(V)
400
600
800
1000
Figure 15. 3rd Quadrant Characteristic at 150 ºC
1000
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
Figure 16. Output Capacitor Stored Energy
1000
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
C
iss
C
iss
Capacitance (pF)
C
oss
Capacitance (pF)
100
100
C
oss
10
C
rss
10
C
rss
1
0
50
100
Drain-Source Voltage, V
DS
(V)
150
200
1
0
100
200
300
400
500
600
Drain-Source Voltage, V
DS
(V)
700
800
900
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 900V)
5
C3M0280090D Rev. 2, 09-2021
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