CCS020M12CM2 datasheet, PDF - EEWORLD Datasheet

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CCS020M12CM2: DescriptionMOSFET - Array 6 N-Channel (3-Phase Bridge) 1200V (1.2kV) 29.5A (Tc) 167W Base Mount Module; CategoryDiscrete semiconductor The transistor; File Size1MB，12 Pages; ManufacturerWolfspeed (Cree)

CCS020M12CM2 Overview

Wolfspeed (Cree Inc. Energy Power Company) silicon carbide power MOSFET modules. These SiC MOSFET modules come in industry-standard packages and are available in half-bridge (2 MOSFET) and 3-phase (6 MOSFET) formats; they also include SiC reverse recovery diodes. Typical applications include: induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regenerative drives, UPS and SMPS, motor drives and battery chargers. The MOSFET turn-off tail current and diode reverse recovery current are effectively zero. Ultra-low loss high frequency operation allows easy paralleling due to SiC properties Normally closed, fail-safe operation Copper substrate and aluminum nitride insulator reduce thermal requirements

CCS020M12CM2 Parametric

Parameter Name	Attribute value
category	Discrete semiconductor;The transistor
Maker	Wolfspeed (Cree)
series	Z-Rec®
Package	tray
technology	Silicon carbide (SiC)
Configuration	6 N-channel (3-phase bridge)
FET function	-
Drain-source voltage (Vdss)	1200V（1.2kV）
Current at 25°C - Continuous Drain (Id)	29.5A（Tc）
On-resistance (maximum value) at different Id and Vgs	98 milliohms @ 20A, 20V
Vgs(th) (maximum value) when different Id	2.2V @ 1mA (standard)
Gate charge (Qg) (maximum value) at different Vgs	61.5nC @ 20V
Input capacitance (Ciss) (maximum value) at different Vds	900pF @ 800V
Power - Max	167W
Operating temperature	-40°C ~ 150°C（TJ）
Installation type	Base installation
Package/casing	module
Supplier device packaging	module
Basic product number	CCS020

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