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Datasheet> All Categories > Discrete semiconductor> The transistor> RQ5P010SNTL
RQ5P010SNTL PDF
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RQ5P010SNTL

Description
N-channel enhancement type MOS transistor, RSR010N10 series, Vds=100 V, 1 A, SOT-346 package, surface mount
CategoryDiscrete semiconductor    The transistor   
File Size2MB，14 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

RQ5P010SNTL Parametric

Parameter NameAttribute value
categoryDiscrete semiconductor;The transistor
MakerROHM Semiconductor
series-
PackageTape and Reel (TR) Cut Tape (CT)
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)100 V
Current at 25°C - Continuous Drain (Id)1A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)4V，10V
On-resistance (maximum value) at different Id and Vgs520 milliohms @ 1A, 10V
Vgs(th) (maximum value) when different Id2.5V @ 1mA
Gate charge (Qg) (maximum value) at different Vgs3.5 nC @ 5 V
Vgs (maximum value)±20V
Input capacitance (Ciss) (maximum value) at different Vds140 pF @ 25 V
FET function-
Power dissipation (maximum)700mW（Ta）
Operating temperature150°C（TJ）
Installation typesurface mount type
Supplier device packagingTSMT3
Package/casingSC-96
Basic product numberRQ5P010

RQ5P010SNTL Preview

Download Datasheet
RQ5P010SN
　　
Nch 100V 1A Small Signal MOSFET
　　
Datasheet
l
Outline
V
DSS
R
DS(on)
(Max.)
I
D
P
D
100V
520mΩ
±1A
1.0W
SOT-346T
SC-96
TSMT3
　
　 　 　 　 　 　
　
l
Inner circuit
l
Features
1) Low on - resistance
2) Built-in G-S Protection Diode
3) Small Surface Mount Package (TSMT3)
4) Pb-free lead plating ; RoHS compliant
l
Packaging specifications
Packing
Reel size (mm)
l
Application
Embossed
Tape
180
8
3000
TL
ZJ
Value
100
±1
±4
±20
1.0
0.7
1.0
0.7
150
-55 to +150
Unit
V
A
A
V
A
mJ
W
W
℃
℃
Type
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
DC/DC converters
l
Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
Symbol
V
DSS
I
D
I
DP*1
V
GSS
I
AS*2
E
AS*2
P
D*3
P
D*4
T
j
T
stg
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
1/11
20170220 - Rev.002
　 　

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