RQ5P010SNTL datasheet, PDF - EEWORLD Datasheet

RQ5P010SNTL: DescriptionN-channel enhancement type MOS transistor, RSR010N10 series, Vds=100 V, 1 A, SOT-346 package, surface mount; CategoryDiscrete semiconductor The transistor; File Size2MB，14 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

RQ5P010SNTL Parametric

Parameter Name	Attribute value
category	Discrete semiconductor;The transistor
Maker	ROHM Semiconductor
series	-
Package	Tape and Reel (TR) Cut Tape (CT)
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	1A（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	4V，10V
On-resistance (maximum value) at different Id and Vgs	520 milliohms @ 1A, 10V
Vgs(th) (maximum value) when different Id	2.5V @ 1mA
Gate charge (Qg) (maximum value) at different Vgs	3.5 nC @ 5 V
Vgs (maximum value)	±20V
Input capacitance (Ciss) (maximum value) at different Vds	140 pF @ 25 V
FET function	-
Power dissipation (maximum)	700mW（Ta）
Operating temperature	150°C（TJ）
Installation type	surface mount type
Supplier device packaging	TSMT3
Package/casing	SC-96
Basic product number	RQ5P010

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