IPT019N08N5ATMA1 datasheet, PDF

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IPT019N08N5ATMA1: DescriptionSurface mount type N channel 80 V 32A (Ta), 247A (Tc) 231W (Tc) PG-HSOF-8-1; CategoryDiscrete semiconductor The transistor; File Size675KB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

IPT019N08N5ATMA1 Overview

Infineon OptiMOS 5 80V n-channel power MOSFETs are available in TO leadless packages and are particularly suitable for high switching frequencies. This package is specifically designed for high current applications such as forklifts, light electric vehicles, POL and telecommunications. With a 60% space reduction compared to the D2PAK 7-pin package, TO-Leadless is the perfect solution where maximum efficiency, excellent EMI behavior, and optimal thermal behavior and space reduction are required. Optimized for synchronous rectification Particularly suitable for high switching frequencies requiring less parallelism for enhanced power density

IPT019N08N5ATMA1 Parametric

Parameter Name	Attribute value
category	Discrete semiconductor;The transistor
Maker	Infineon
series	OptiMOS™5
Package	Tape and Reel (TR) Cut Tape (CT)
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	80 V
Current at 25°C - Continuous Drain (Id)	32A（Ta），247A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	6V，10V
On-resistance (maximum value) at different Id and Vgs	1.9 milliohms @ 150A, 10V
Vgs(th) (maximum value) when different Id	3.8V @ 159µA
Gate charge (Qg) (maximum value) at different Vgs	127 nC @ 10 V
Vgs (maximum value)	±20V
Input capacitance (Ciss) (maximum value) at different Vds	9200 pF @ 40 V
FET function	-
Power dissipation (maximum)	231W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	surface mount type
Supplier device packaging	PG-HSOF-8-1
Package/casing	8-PowerSFN
Basic product number	IPT019

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