BSZ063N04LS6ATMA1 datasheet, PDF

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BSZ063N04LS6ATMA1: DescriptionSurface mount type N channel 40 V 15A (Ta), 40A (Tc) 2.5W (Ta), 38W (Tc) PG-TSDSON-8-FL; CategoryDiscrete semiconductor The transistor; File Size2MB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

BSZ063N04LS6ATMA1 Overview

This MOSEFT from Infineon is optimized for synchronous applications and features ultra-low on-resistance and excellent thermal resistance. N-channel excellent heat resistance, lead-free lead plating complies with RoHS standards, halogen-free, complies with IEC61249-2-22

BSZ063N04LS6ATMA1 Parametric

Parameter Name	Attribute value
category	Discrete semiconductor;The transistor
Maker	Infineon
series	OptiMOS™ 6
Package	Tape and Reel (TR) Cut Tape (CT)
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	15A（Ta），40A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	4.5V，10V
On-resistance (maximum value) at different Id and Vgs	6.3 milliohms @ 20A, 10V
Vgs(th) (maximum value) when different Id	2.3V @ 250µA
Gate charge (Qg) (maximum value) at different Vgs	9.5 nC @ 10 V
Vgs (maximum value)	±20V
Input capacitance (Ciss) (maximum value) at different Vds	650 pF @ 20 V
FET function	-
Power dissipation (maximum)	2.5W（Ta），38W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	surface mount type
Supplier device packaging	PG-TSDSON-8-FL
Package/casing	8-PowerTDFN
Basic product number	BSZ063

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