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Datasheet> All Categories > Discrete semiconductor> The transistor> IAUC120N04S6L009ATMA1
IAUC120N04S6L009ATMA1 PDF
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IAUC120N04S6L009ATMA1

Description
Surface mount type N channel 40 V 150A (Tc) 150W (Tc) PG-TDSON-8-34
CategoryDiscrete semiconductor    The transistor   
File Size669KB，9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

IAUC120N04S6L009ATMA1 Overview

Infineon OptiMOS6 40V power MOS technology in a 5x6mm2 SS08 leadless package offers the highest quality level and ruggedness for automotive applications. The product portfolio consists of 16 products, allowing customers to find the most suitable product for their application. All of this results in the best-in-class FOM and performance on the market. The new SS08 product offers a 120A continuous current rating, >25% higher than standard DPAK, and accounts for nearly half its footprint. AEC Q101 certified MSL1 Up to 260°C Peak reflow operating temperature 175°C Green product (RoHS compliant) 100% avalanche tested

IAUC120N04S6L009ATMA1 Parametric

Parameter NameAttribute value
categoryDiscrete semiconductor;The transistor
MakerInfineon
seriesOptiMOS™-6
PackageTape and Reel (TR) Cut Tape (CT)
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)40 V
Current at 25°C - Continuous Drain (Id)150A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)4.5V，10V
On-resistance (maximum value) at different Id and Vgs960 milliohms @ 60A, 10V
Vgs(th) (maximum value) when different Id2V @ 90µA
Gate charge (Qg) (maximum value) at different Vgs128 nC @ 10 V
Vgs (maximum value)±16V
Input capacitance (Ciss) (maximum value) at different Vds7806 pF @ 25 V
FET function-
Power dissipation (maximum)150W（Tc）
Operating temperature-55°C ~ 175°C（TJ）
Installation typesurface mount type
Supplier device packagingPG-TDSON-8-34
Package/casing8-PowerTDFN
Basic product numberIAUC120

IAUC120N04S6L009ATMA1 Preview

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IAUC120N04S6L009
OptiMOS
™
- 6 Power-Transistor
Product Summary
V
DS
R
DS(on),max
I
D
40
0.9
120
PG-TDSON-8
V
mW
A
Features
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
1
1
Type
IAUC120N04S6L009
Package
PG-TDSON-8
Marking
6N04L009
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
T
C
=25°C,
V
GS
=10V
2,3)
T
C
=100°C,
V
GS
=10V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25°C
I
D
=60A,
R
G,min
=25W
R
G,min
=25W
-
T
C
=25°C
-
Value
120
150
120
480
400
60
±
16
150
-55 ... +175
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2019-04-15

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