P-channel and N-channel MOS tube switch circuit diagram

Do you know about the field effect transistor switching circuit? This circuit is generally divided into two types, one is N-channel and the other is P-channel. If you want to apply high-end drive in your circuit design, you can use PMOS to guide it. Pass, if you are interested, follow the editor to learn about the P-channel and N-channel MOS tube switch circuit diagrams !

Mos tube circuit diagram

The MOS tube switching circuit is a circuit constructed based on the principle that the MOS tube gate (g) controls the MOS tube source (s) and drain (d) on and off. MOS tubes are divided into N-channel and P-channel, so switching circuits are mainly divided into two types.

1. P-channel MOS tube switching circuit

The characteristic of PMOS is that it will turn on when Vgs is less than a certain value, which is suitable for situations where the source is connected to VCC (high-end drive). It should be noted that Vgs refers to the voltage of gate G and source S, that is, the gate is turned on when it is lower than a certain voltage of the power supply, not the voltage relative to ground. However, because PMOS conduction internal resistance is relatively large, it is only suitable for low power situations. N-channel MOS tubes are still used for high power.

2. N-channel mos tube switching circuit

The characteristics of NMOS, Vgs will be turned on when it is greater than a certain value. It is suitable for use when the source is grounded (low-end drive). As long as the gate voltage is greater than the Vgs given in the parameter manual, the drain D is connected to the power supply. , source S is grounded. It should be noted that Vgs refers to the voltage difference between gate G and source S, so when NMOS is used as a high-side driver, when drain D and source S are turned on, the potential of drain D and source S are equal, then Gate G must be higher than the voltage of source S and drain D so that drain D and source S can continue to conduct.

The above is the relevant introduction to the field effect transistor switching circuit. The high-end driver generally applies the characteristics of PMOS, while the low-end driver generally applies the characteristics of NMOS. What is measured is the voltage difference between the gate G and the source S.