How to understand MOS tube parameters

bigbat

How to understand MOS tube parameters [Copy link]

IRFB7734PBF parameter
type: N-channel drain-source voltage (Vdss): 75V Continuous drain current (Id): 183A Power (Pd): 290W On-resistance (RDS(on)@Vgs,Id): 3.5mΩ@10V,100A Threshold voltage (Vgs(th)@Id): 3.7V@250μA
What I understand is: for this MOS tube, when the Vgs voltage is 10V and the Vds is 75V, the DS resistance is 3.5mΩ, and the maximum allowable current is 183A. The RDS(on)@Vgs is 10V. Is this voltage the minimum voltage? What will happen if it is greater than 10V? Will the on-resistance continue to decrease?

maychang

"What will happen if it is greater than 10V? Will the on-resistance continue to decrease?"

When the actual Vgs is greater than 10V, the on-resistance will be a little smaller, but the reduction is very limited, and it can be said that there is basically no change.

学无止境02

My understanding is: "Threshold voltage (Vgs(th)@Id): 3.7V@250μA" V, GS is the minimum voltage for drain and source conduction at 3.7V, at this time the maximum Id is 250uA, the impedance between S and D is still relatively large and meaningless. The datasheet also recommends that when GS is 10V, D and S are in the best state, and Id supports a maximum of 100A. If GS is greater than 10V, there is basically no big change in the on-resistance, but if GS is too large, it will burn out the tube (see the specification for how large GS will burn out the tube).

athos21

The question raised by the author is generally about looking at the curve of DATASHEET. The above figure is the relationship between VGS and RDS(ON) of IRFB7734PBF. Basically, it can be seen that above 10V, RDSON basically does not change. Usually, we consider RDSON of VGS greater than 3 times VTH to be unchanged.