Award-winning review | Exploring Micron's 176-layer 3D NAND technology & 1α DRAM technology

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Award-winning review | Exploring Micron's 176-layer 3D NAND technology & 1α DRAM technology [Copy link]

[Event Details] Prize-winning Comments | Exploring Micron's 176-layer 3D NAND Technology & 1α DRAM Technology

As the most technologically advanced NAND node on the market, Micron's industry-first 176-layer 3D NAND reduces read and write latency by more than 35% and improves mixed workload performance by 15%, helping storage applications in data centers, smart edge, and mobile devices achieve higher performance. Micron's 1α node is currently the world's most advanced DRAM process technology, helping applications in data centers, automobiles, smart edge, mobile, and other fields to have stronger reliability, higher memory density, better energy saving, and best-in-class performance. Welcome everyone to learn about Micron's 176-layer 3D NAND technology & 1α DRAM technology, and you can also win a 50-yuan JD card by commenting.

[Event time] From now until March 8, 2022

[How to participate]
Step 1: Enter the >> event details page and read Micron's [176-layer 3D NAND] and [1a DRAM] related information and technology; Step 2: Enter the page [Comment Area] and post a comment of no less than 30 words (selection, problems, etc.), plagiarism is prohibited.

[Activity Rules]
1. Each person can comment once. Please fill in and submit the participation form carefully before commenting;
2. Each person has only one chance to win. Multiple account registrations, unclear information, plagiarism, etc. will be deemed invalid;
3. After the event, 30 people will be selected based on the quality of the comments to receive a JD.com card worth 50 yuan.

【Gift Settings】