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Xiaomi WIFI socket basic module

Overview

This project is the smallest system with a built-in WIFI module in the basic version of Xiaomi WIFI socket. If you have a broken socket at home, you might as well give it a try~
The module uses SY8120 power supply and supports up to 18V power supply. Use TYPE-C interface and reserve a power interface for convenient power supply.
The right side is an expansion module, which can control one light or one relay. You can also cut off the right module to keep the minimum system usage.

Design Files

Related Devices

Devices	Class	introduce	Datasheet
SY8120B1ABC	Power/power management;DC - DC chip	Output current: 2A Switch operating frequency: 500kHz Output type: Adjustable Number of output voltage channels: 1 Function type: Step-Down Output configuration: Positive input 18V with enable control 2A, synchronous step-down DCDC, high transient response, soft Start-up anti-surge current built-in high-precision reference source, over-current protection, compliant with Rohs standards	Download
RMC060322.1K1%N	SMD resistor		Download
SKPMAME010	accessories;Light touch switch	Circuit structure: SPST-NO Contact rated current: 50mA @ 16VDC Button head type: Round Button Button action direction: Top Actuated	Download
CBM321609U190T	Passive components;Magnetic beads	Impedance @ Frequency: 19Ω @ 100MHz Number of Lines: 1 Rated Current (Max): 6A DC Resistance (DCR) (Max): 15mΩ	Download
HPCR0603F100KK9	Passive components;High power SMD resistor	Power: 200mW Resistance (ohms): 100K Accuracy: ±1% 0.2W, rated power is twice that of ordinary chip resistors	Download
HF32FV-G/12-HSTF	accessories;relay	Contact form: SPST-NO Contact rated current: 10A Coil type: Non Latching Coil voltage: 12VDC Relay type: General Purpose Ultra-small 12V relay 10A A set of normally open 2000W	Download
M7	Discrete semiconductor;General diode	DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 1A Forward voltage drop (Vf): 1.1V @ 1A 1000V, 1A, VF=1.1V@1A	Download
X6511WR-02H-C30D60-R2			Download
VLS3012ET-4R7M	Passive components;inductor	Accuracy: ±20% Rated current: 950mA DC resistance (internal resistance): 156mΩ Inductance value: 4.7uH	Download
CJK3401	Discrete semiconductor;MOS (field effect tube)	Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 4.2A Gate-source threshold voltage: 1.3V @ 250uA Drain-source on-resistance: 60mΩ @ 4.2A, 10V Maximum power dissipation (Ta=25°C): 450mW Type: P channel P channel, -30V, -4.2A, 60mΩ@-10V	Download
AR03FTDX1003			Download
TFPT0603L1001FV	Passive components;The resistor	Power: 3/4W Operating temperature: -55℃~+150℃ Normal temperature resistance value (25°C, ohms): 1K Resistance accuracy: ±1%	Download
CC1206CP9BN		SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS	Download
PZ1608D600-2R0TF	Passive components;Magnetic beads	Impedance @ Frequency: 60Ω @ 100MHz Number of Lines: 1 Rated Current (Max): 2A DC Resistance (DCR) (Max): 80mΩ	Download
TMK212BJ475KG-T	Passive components;capacitor	Accuracy: ±10% Capacitance: 4.7uF Rated voltage: 25V Temperature drift coefficient (dielectric material): X5R	Download

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Update:2024-11-14 23:22:58

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